Crystal growth and composition-property relationship ofCe3Pd20Si6single crystals

Abstract

To elucidate the discrepancies in low-temperature data reported on the quantum critical heavy fermion compound Ce 3 Pd 20 Si 6 and reveal the compound's intrinsic properties, single crystals of varying stoichiometry were grown by various techniques-from the melt and from high-temperature solutions using fluxes of various compositions. The resulting stoichiometry of the crystals as well as their physical properties show sizable dependence on the different growth techniques. The Ce content ⌬Ce varies by more than 3 at. % among all grown single crystals. We have revealed a systematic dependence of the residual resistance ratio, the lattice parameter, the ͑lower͒ phase-transition temperature T L , and the maximum in the temperature dependent electrical resistivity T max with ⌬Ce. This clarifies the sizable variation in the values of T L reported in the literature. We discuss the physical origin of the observed composition-property relationship in terms of a Kondo lattice picture. We predict that a modest pressure can suppress T L to zero and thus induce a quantum critical point.

Modern Aspects of Bulk Crystal and Thin Film Preparation

“…The results of this work on Ce 3 Pd 20 Si 6 have been partially reported earlier [Prokofiev et al (2009)]. Here a more detailed analysis including also information on new crystal growth experiments as well as the physical property measurements on new single crystals are reported.…”

“…Therefore, in the paper the consideration of crystal growth is accompanied by the discussion of their physical properties. Physical property measurements on Ce 3 Pd 20 Si 6 single crystals grown by the floating zone technique have been reported earlier [Goto et al (2009), Prokofiev et al (2009), Mitamura et al (2010)]. In Ref.…”

“…In Ref. Prokofiev et al (2009) a systematic study of the relationship between the growth technique, stoichiometry and physical properties of single crystals has been done. The crystal growth and stoichiometry of CeRu 4 Sn 6 and CeAuGe are reported for the first time.…”

Converse effect of pressure on the quadrupolar and magnetic transition inCe3Pd20Si6

“…The critical pressure necessary to fully suppress T N was estimated to be 5 kbars [21]. Electrical resistivity and specific heat investigations on a lower quality polycrystalline Ce 3 Pd 20 Si 6 sample up to 80 kbars (8 GPa) in temperatures down to 0.5 K revealed an increase of the Kondo temperature (T K ) with pressure [22].…”

“…Our aim is to investigate how T N and T Q evolve with pressure in the range where the pressure-tuned AF QCP was predicted [21]. We also explore whether the field-induced quantum criticality is modified under pressure.…”