Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals

Masubuchi, Yuji; Yamaoka, Ryohei; Motohashi, Teruki; Kirihara, Kazuhiro; Lee, Woong; Watanabe, Kentaro; Sekiguchi, Takashi; Kikkawa, Shinichi

doi:10.1016/j.jcrysgro.2011.10.008

Cited by 9 publications

(8 citation statements)

References 28 publications

(22 reference statements)

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“…70) The nanowires grew to a maximum length of 150¯m from seed crystals of several micrometers long, but did not grow laterally at 750 and 800°C as shown in Figs. 7(a) and 7(b).…”

Section: Crystal Growth and Characterization Of Gallium Oxynitride Namentioning

confidence: 98%

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Synthesis, structure and properties of new functional oxynitride ceramics

Masubuchi

2013

J. Ceram. Soc. Japan

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Novel metal oxynitrtides have been prepared by nitridation of amorphous metal oxide precursors obtained through citrate route. Their crystal structure, especially in O/N distribution and local bonding characteristics has been analyzed by using neutron diffraction, X-ray absorption and transmission electron microscopy, to investigate their electric and optical properties. In dielectric SrTaO 2 N, crystal structure refinement suggested the short range O/N ordering and local tilting of cis-TaO 4 N 2 octahedra, resulting in its unusual large permittivity. Its dense ceramics were sintered with SrCO 3 additive and exhibited superior dielectric constant above 1 © 10 4 at room temperature. New biphasic wurtzite and zinc-blende structure of gallium oxynitride nanowire was observed by using transmission electron microscopy. As-grown long gallium oxynitride nanowire exhibited a characteristic broad UV emission at 4.3 eV in its cathodoluminescene spectrum. New oxynitride phosphor having magnetoplumbite structure, LaAl 12 (O,N) 19 :Eu showed photoluminescence emission peak splitting due to Eu 2+ site splitting to two crystallographic sites induced by the two kinds of anions in its crystal structure.

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“…70) The nanowires grew to a maximum length of 150¯m from seed crystals of several micrometers long, but did not grow laterally at 750 and 800°C as shown in Figs. 7(a) and 7(b).…”

Section: Crystal Growth and Characterization Of Gallium Oxynitride Namentioning

confidence: 98%

“…70) As nitrided GaON nanowire mixed with agglomerated grains were ultrasonically dispersed in acetone. The suspended solution was then dropped onto a silica glass substrate to use the GaON nanowires as seed crystals for subsequent nanowire growth.…”

Section: Crystal Growth and Characterization Of Gallium Oxynitride Namentioning

confidence: 99%

Synthesis, structure and properties of new functional oxynitride ceramics

Masubuchi

2013

J. Ceram. Soc. Japan

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“…Scanning 4 transmission electron microscopy (STEM) observation of GaNO nanowires indicates that the growth direction is parallel to the hexagonal c-plane, and there is a stacking disorder of several atomic layers between biphasic wurtzite and zinc-blende lattices along the hexagonal c-axis [14]. Cathodoluminescence (CL) spectra of GaNO nanowires revealed a broad emission and persistent photoconductivity (PPC) under UV irradiation [15]. Both the broad CL emission and PPC are considered to be induced by gallium vacancies caused by the oxide ion substitution of nitride ions in hexagonal GaN.…”

Section: Introductionmentioning

confidence: 99%

Preparation and optical property of gallium zinc oxynitride powder and nanocrystals with sawtooth-like appearance

Kamura

Masubuchi

Motohashi

et al. 2017

Materials Research Bulletin

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Gallium zinc oxynitride powder and its nanocrystals were obtained by nitridation of a ZnGa 2 O 4 precursor under NH 3 flow. The nitrided powder had the chemical composition of (Ga 0.75 Zn 0.23 □ 0.02)(N 0.71 O 0.29), where □ indicates a vacancy, and showed improved crystallinity with a decrease in cationic vacancies compared to that for pristine gallium oxynitride without zinc. Gallium zinc oxynitride nanocrystals with rod-like morphology were obtained by nitridation of the oxide precursor on a NiO pellet. The nanorod crystals were several hundred nanometers wide and several micrometers long. The nanorods had a sawtooth appearance with triangular grains aligned along the length direction of the rods. The nanocrystals with a chemical composition of Ga/Zn = 0.80/0.20 exhibited a broad cathodoluminescence emission at 2.1 eV, similar to the powder products.

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“…Gallium (Ga)-based compound materials such as gallium oxynitride (GaON) [7][8][9], gallium nitride (GaN) [10], and gallium oxide (Ga 2 O 3 ) [11] are among the promising inorganic compound semiconductors that provide many advantages over other organic materials for electronic and optoelectronic device applications [12][13][14][15][16][17][18][19]. Graphene, a carbon allotrope, possesses high carrier mobility, exceeding 10 4 cm 2 /Vs, even at room temperature (RT) [20].…”

Section: Introductionmentioning

confidence: 99%

Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature

Wong¹,

Ali²,

Yasui³

et al. 2016

Nano Online

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We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga 2 O 3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH 4 NO 3) and gallium nitrate (Ga(NO 3) 3) by electrochemical deposition (ECD) method at room temperature (RT) for the first time. The controlling parameters of current density and electrolyte molarity were found to greatly influence the properties of the grown structures. The thicknesses of the deposited structures increase with the current density since it increases the chemical reaction rates. The layers grown at low molarities of both solutions basically show grain-like layer with cracking structures and dominated by both Ga 2 O 3 and GaON. Such cracking structures seem to diminish with the increases of molarities of one of the solutions. It is speculated that the increase of current density and ions in the solutions helps to promote the growth at the area with uneven thicknesses of graphene. When the molarity of Ga(NO 3) 3 is increased while keeping the molarity of NH 4 NO 3 at the lowest value of 2.5 M, the grown structures are basically dominated by the Ga 2 O 3 structure. On the other hand, when the molarity of NH 4 NO 3 is increased while keeping the molarity of Ga(NO 3) 3 at the lowest value of 0.8 M, the GaON structure seems to dominate where their cubic and hexagonal arrangements are coexisting. It was found that when the molarities of Ga(NO 3) 3 are at the high level of 7.5 M, the grown structures tend to be dominated by Ga 2 O 3 even though the molarity of NH 4 NO 3 is made equal or higher than the molarity of Ga(NO 3) 3. When the grown structure is dominated by the Ga 2 O 3 structure, the deposition process became slow or unstable, resulting to the formation of thin layer. When the molarity of Ga(NO 3) 3 is increased to 15 M, the nanocluster-like structures were formed instead of continuous thin film structure. This study seems to successfully provide the conditions in growing either GaON-dominated or Ga 2 O 3-dominated structure by a simple and low-cost ECD. The next possible routes to convert the grown GaON-dominated structure to either single-crystalline GaN or Ga 2 O 3 as well as Ga 2 O 3-dominated structure to single-crystalline Ga 2 O 3 structure have been discussed.

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Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals

Cited by 9 publications

References 28 publications

Synthesis, structure and properties of new functional oxynitride ceramics

Synthesis, structure and properties of new functional oxynitride ceramics

Preparation and optical property of gallium zinc oxynitride powder and nanocrystals with sawtooth-like appearance

Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature

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