Crystal and electronic structure studies on transparent conducting nitrides A ₃N₂ (A = Mg, Zn and Sn) and Sn₃N₄

Enhanced Emission of Zinc Nitride Colloidal Nanoparticles with Organic Dyes for Optical Sensors and Imaging Application

“…15 Zinc nitride (Zn 3 N 2 ) has potential optoelectronic and photovoltaic electronic properties, with good chemical stability and also suggested for a cost-effective solar material. 29 It belongs to the semiconductor II−IV group with high carrier concentration and electron mobility. The firstprinciples calculation shows that Zn 3 N 2 has the highest bond strength [2.562 eV for Zn−N(2) and 1.764 eV for Zn−N(1)] and lowest electron effective mass [(0.08−0.03)m o ].…”

“…The firstprinciples calculation shows that Zn 3 N 2 has the highest bond strength [2.562 eV for Zn−N(2) and 1.764 eV for Zn−N(1)] and lowest electron effective mass [(0.08−0.03)m o ]. 29 In 1940, Juza et al synthesized Zn 3 N 2 powder for the first time, and it remained as an unresearched material over 50 years. Later in 1993, Kuriyama et al 30 prepared a zinc nitride film using the direct reaction between zinc and ammonia and evaporated onto the quartz substrate with the band gap of 2.2−2.4 eV.…”

“…The unique properties of this material are biocompatibility, stability, and ability to use in biomedical applications . Zinc nitride (Zn 3 N 2 ) has potential optoelectronic and photovoltaic electronic properties, with good chemical stability and also suggested for a cost-effective solar material . It belongs to the semiconductor II–IV group with high carrier concentration and electron mobility.…”

“…It belongs to the semiconductor II–IV group with high carrier concentration and electron mobility. The first-principles calculation shows that Zn 3 N 2 has the highest bond strength [2.562 eV for Zn–N(2) and 1.764 eV for Zn–N(1)] and lowest electron effective mass [(0.08–0.03) m o ] . In 1940, Juza et al synthesized Zn 3 N 2 powder for the first time, and it remained as an unresearched material over 50 years.…”

Спектроскопия Тонких Пленок Оксида Цинка Вблизи Края Фундаментального Поглощения

“…Основной оптической характеристикой кристалла является область собственного или основного поглощения, ограниченная с длинноволновой стороны краем полосы фундаментального поглощения, положение которого определяется шириной запрещенной зоны. При значениях длины волны, больших указанной границы, соответствующей межзонным переходам, беспримесный кристалл является прозрачным [5]. К настоящему времени задачи исследования природы и энергетических параметров локальных центров в структуре ZnO, ответственных за оптические свойства в области края фундаментального поглощения, не получили конечного решения.…”