2004
DOI: 10.1016/j.jssc.2004.03.008
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Crystal and electronic structure of the red semiconductor Ba4LaSbGe3Se13 comprising the complex anion [Ge2Se7–Sb2Se4–Ge2Se7]14−

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Cited by 20 publications
(15 citation statements)
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“…[37] There is one crystallographically independent Sb atom, which is sixfold coordinated by Se atoms in a octahedral environment (Figure 1b). The SbSe 6 octahedra is slightly distorted with SbSe bond lengths between 2.867(3) and 2.879(3) Å, which is comparable with those found in related compounds, for instance, La 4 FeSb 2 Se 10 [2.6018(5)-3.0205(7) Å], [20] CrSbSe 3 , [38] [2.643 (1) [23] and Ba 4 LaSbGe 3 Se 13 [2.5730(13)-3.0639(13) Å] [19] It includes one crystallographically unique Si atom, which is surrounded by four Se atoms in a distorted tetrahedral environment with Si-Se distances of 2.245 (4) [23] where the Si atom is stabilized in a similar tetrahedral site with Si-Se distances ranging from 2.270(3) to 2.297(3) Å and Se-Si-Se angles varying from 104.13 (13) There exist one unique La atom, which exhibit approximate square antiprismatic environments with La-Se contacts in the range of 3.0247(9) to 3.2446(12) Å. All these La-Se distances [20] and Ba 4 LaSbGe 3 Se 13 [3.0279(12)-3.2023(13) Å].…”
Section: Crystal Structuresupporting
confidence: 81%
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“…[37] There is one crystallographically independent Sb atom, which is sixfold coordinated by Se atoms in a octahedral environment (Figure 1b). The SbSe 6 octahedra is slightly distorted with SbSe bond lengths between 2.867(3) and 2.879(3) Å, which is comparable with those found in related compounds, for instance, La 4 FeSb 2 Se 10 [2.6018(5)-3.0205(7) Å], [20] CrSbSe 3 , [38] [2.643 (1) [23] and Ba 4 LaSbGe 3 Se 13 [2.5730(13)-3.0639(13) Å] [19] It includes one crystallographically unique Si atom, which is surrounded by four Se atoms in a distorted tetrahedral environment with Si-Se distances of 2.245 (4) [23] where the Si atom is stabilized in a similar tetrahedral site with Si-Se distances ranging from 2.270(3) to 2.297(3) Å and Se-Si-Se angles varying from 104.13 (13) There exist one unique La atom, which exhibit approximate square antiprismatic environments with La-Se contacts in the range of 3.0247(9) to 3.2446(12) Å. All these La-Se distances [20] and Ba 4 LaSbGe 3 Se 13 [3.0279(12)-3.2023(13) Å].…”
Section: Crystal Structuresupporting
confidence: 81%
“…[5,[10][11][12] However, rare earth-antimony-chalcogenides are less studied, only several compounds are known, such as La 7 Sb 9 S 24 , [13] Pr 8 Sb 2 S 15 , [14] EuSbSe 3 , [15] K 2 RE 2-x Sb 4+x Se 12 (RE = La, Ce, Pr, Gd), [16] K 2 RE 2 Sb 2 Q 9 (RE = La, Q = S; RE = Gd, Q = Se), [17] Na 9 Gd 5 Sb 8 S 26 , [18] and Ba 4 LaGe 3 SbSe 13 . [19] Recently, many efforts in the quaternary RE/M/Sb/Q (RE = rare earth metal, M = main group or transition metal, Q = chalcogenides) system have yielded several compounds with structural diversity and technologically important properties, such as La 4 FeSb 2 S 10 , RE 2 Mn 3 Sb 4 S 12 (RE = Pr, Nd, Sm, Gd), [20] RE 4 GaSbS 9 (RE = Pr, Nd, Sm, Gd-Ho) [21] with strong SHG 1 hedra running parallel to the c direction surrounded by the discrete SiSe 4 tetrahedra and La cations. UV/Vis/NIR diffuse reflectance spectroscopy study shows its optical gap of around 1.75 eV.…”
Section: Introductionmentioning
confidence: 99%
“…[5,6] The [6] However, open-framework chalcogenides incorporating Group 15 metal asymmetric coordination polyhedra and Group 14 metal tetrahedra have not been to date documented.…”
mentioning
confidence: 99%
“…Moreover, the most studied materials in thermoelectric research include ternary and higher antimony chalcogenides [5][6][7][8][9][10][11][12][13][14]. In our research group we have thus far focused on potential thermoelectric materials in the metal tetrelide, pnictide and chalcogenide systems using both experimental and theoretical approaches [15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%