2015
DOI: 10.1016/j.nima.2014.11.016
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Cryogenic ultra-low noise HEMT amplifiers board

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Cited by 7 publications
(5 citation statements)
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“…First, the noise in the charge readout channel could be improved by a factor of approximately three by use of high-electron mobility transistor (HEMT) amplifiers instead of the standard junction gate field effect transistor ( JFET) amplifiers that are presently in use. This would enable an ionization rms of the order of 100 eV (79,81). Furthermore, JFETs require an operating temperature above 80 K, whereas HEMTs natively operate at ∼4 K; therefore, the complexity of the readout scheme, as well as the cable links from detectors to the first ionization amplification stage, can be significantly reduced.…”
Section: Ionization-heat Low-temperature Detectorsmentioning
confidence: 99%
“…First, the noise in the charge readout channel could be improved by a factor of approximately three by use of high-electron mobility transistor (HEMT) amplifiers instead of the standard junction gate field effect transistor ( JFET) amplifiers that are presently in use. This would enable an ionization rms of the order of 100 eV (79,81). Furthermore, JFETs require an operating temperature above 80 K, whereas HEMTs natively operate at ∼4 K; therefore, the complexity of the readout scheme, as well as the cable links from detectors to the first ionization amplification stage, can be significantly reduced.…”
Section: Ionization-heat Low-temperature Detectorsmentioning
confidence: 99%
“…By replacing the JFET with a HEMT, we have already achieved equivalent charge resolution as the present CDMS JFET amplifier when coupled to a CDMS-II detector, with the room temperature electronics limiting the resolution [18]. Within the EDELWEISS collaboration, progress has been made using a voltage amplifier topology, however testing still needs to be performed with a live detector [19].…”
Section: Introductionmentioning
confidence: 99%
“…In the past years, we have used these Cryo-HEMTs to develop a generic voltage amplifier, that could be easily adapted to different kinds of applications. 8 This amplifier board has been tested at 4.2K and has demonstrated a gain of 50, a power consumption of 1.5mW per channel, and an input noise voltage lower than 0.5nV/ √ Hz at 1kHz, which is very close to noise performance of the Cryo-HEMT themselves. Here the idea is to take full advantage of this previous development and adapt this board as much as possible in order to make a current amplifier for the calibrated MCT.…”
Section: Cryo-hemt Current Amplifiermentioning
confidence: 69%