Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology
Alberto Gatti,
Filip Tavernier
Abstract:This paper presents the cryogenic characterization and compact modeling of thin-oxide MOSFETs in a standard 65-nm Si-bulk CMOS technology. The influence of both short and narrow channel effects at extremely low temperature on key device parameters such as threshold voltage and ON current is highlighted, and the performance of this technology node for cryogenic analog circuit design is discussed. It is then demonstrated, for the widest range of gate geometries in literature, that the BSIM4 parameter editing app… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.