2008
DOI: 10.1109/jmems.2008.2005328
|View full text |Cite
|
Sign up to set email alerts
|

Cryogenic Performance of RF MEMS Switch Contacts

Abstract: Abstract-A series of experiments was performed to characterize RF microelectromechanical system switch performance under variable environmental conditions and cryogenic temperatures. Data were recorded in helium and nitrogen environments to lower stiction failure rates as well as to circumvent switch bouncing arising from low pressure at cryogenic temperatures. Contact resistance values were observed to be lower at cryogenic temperatures but still two orders of magnitude higher than the values predicted for th… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
18
0

Year Published

2008
2008
2020
2020

Publication Types

Select...
6

Relationship

3
3

Authors

Journals

citations
Cited by 23 publications
(23 citation statements)
references
References 24 publications
1
18
0
Order By: Relevance
“…One possible explanation, which will be discussed at length in a separate publication [52], could be that vacuum tunneling currents present in the nearby regions are suppressed upon uptake of adsorbed films [31][32][33][34][35][36]. This scenario, which theoretically would increase the resistance by levels that are consistent with the experiment [52], is also consistent with the fact that the change in resistance is constant after the switch remains closed for 30 min with a contact force of *300 lN [42,43]. Alternatively, the molecules may in fact be confined to within the contacts or subsurface defects and exhibit far more conductive behavior than might first be expected [31][32][33][34][35][36].…”
Section: Discussionsupporting
confidence: 56%
See 3 more Smart Citations
“…One possible explanation, which will be discussed at length in a separate publication [52], could be that vacuum tunneling currents present in the nearby regions are suppressed upon uptake of adsorbed films [31][32][33][34][35][36]. This scenario, which theoretically would increase the resistance by levels that are consistent with the experiment [52], is also consistent with the fact that the change in resistance is constant after the switch remains closed for 30 min with a contact force of *300 lN [42,43]. Alternatively, the molecules may in fact be confined to within the contacts or subsurface defects and exhibit far more conductive behavior than might first be expected [31][32][33][34][35][36].…”
Section: Discussionsupporting
confidence: 56%
“…The actuation voltage to close the switches ranged from 87 to 99 V, corresponding to 280-365 lN [42,43]. Once a device was closed, the actuation voltage was held constant for over 30 min to allow the time dependence of the contact resistance to be documented.…”
Section: Experimental Setup and Data Collectionmentioning
confidence: 99%
See 2 more Smart Citations
“…1,2 Gold is often used for rf MEMS contacts because of its chemical inertness and low resistivity but its softness resulted in insufficient reliability for commercial applications. [4][5][6][7][8] Since these studies were performed in conditions where condensation of contaminants can easily occur, their reproducibility is uncertain. [4][5][6][7][8] Since these studies were performed in conditions where condensation of contaminants can easily occur, their reproducibility is uncertain.…”
Section: Impact Of In Situ Oxygen Plasma Cleaning On the Resistance Omentioning
confidence: 99%