Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K

Cheng, Hao-Tien; Wu, Chao−Hsin; Fu, Weimin; Wang, Hsiao-Lun; Feng, Milton; Wu, Chao-Hsin

doi:10.1109/oecc48412.2020.9273549

Cited by 1 publication

(1 citation statement)

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“…Over the last few years, quantum computing has been the focus of various researchers, and quantum wiring is one of the most problematic issues at below 4 Kelvin (K) or even milliKelvin (mK) levels of cryogenic environments [39]. VCSELs have shown their capabilities in cryogenic environments and have been operated up to 40 and 50 GHz, as reported by Cheng et al and Feng's group at the University of Illinois Urbana-Champaign (UIUC) in 2020 and 2021, respectively [40,41]. For readout circuits that usually operate at sub-4K, Feng's group demonstrated a cryo-VCSEL that may operate at an extremely low temperature of 2.6 K with an error-free transmission of up to 12.5 Gb/s [27].…”

Section: Next-generation Computingmentioning

confidence: 99%

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.

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