Cryogenic etching of nano-scale silicon trenches with resist masks

Wu, Y.; Olynick, D. L.; Goodyear, Andy; Péroz, Christophe; Dhuey, Scott; Liang, Xiaogan; Cabrini, Stefano

doi:10.1016/j.mee.2010.11.055

Cited by 30 publications

(29 citation statements)

References 15 publications

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“…In this study, the cryogenic process was utilized to deep etch silicon as it has been reported for sub-micrometric features in various references [42][43][44][45]. It consists of exposing cryogenically cooled samples to a monocyclic SF 6 /O 2 plasma [46][47][48][49].…”

Section: Silicon Cryogenic Etchingmentioning

confidence: 99%

Polymer masks for structured surface and plasma etching

Vital

Vayer

Sinturel

et al. 2015

Applied Surface Science

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Section: Silicon Cryogenic Etchingmentioning

confidence: 99%

Polymer masks for structured surface and plasma etching

Vital

Vayer

Sinturel

et al. 2015

Applied Surface Science

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“…The Bosch process has been used to etch 200 nm-pitch gratings to 6 μ m in depth (aspect ratio of 60) [21]. The cryogenic process utilize a plasma of combined sulfur hexafluoride (SF 6 ) and oxygen (O 2 ) to passivate the sidewall (where a layer of SiO x F y is formed) and etch the bottom of silicon simultaneously [22–25]. The etching is typically carried out at −130 to −100 °C.…”

Section: Introductionmentioning

confidence: 99%

Cryogenic Etching of High Aspect Ratio 400-nm Pitch Silicon Gratings

Miao

Chen

Mirzaeimoghri

et al. 2016

J. Microelectromech. Syst.

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The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO2, while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μm depth, corresponding to an aspect ratio of ≈ 53.

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“…Another application is in nano-electromechanical systems and nano-photonics systems, where deep trenches are desired. 11 An important development step in the history of C method is parameterization of the in-grating-surface variable, 12,13 which means replacing Eq. (1) with…”

Section: Introductionmentioning

confidence: 99%

Enlarging applicability domain of the C method with piecewise linear parameterization: gratings of deep and smooth profiles

2015

SPIE Proceedings

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We present two piecewise linear parameterization schemes for the parameterized coordinate transformation method (the C method) to enable it to model gratings of deep and smooth grooves. This work generalizes and elaborates our previous work [Opt. Lett. 39(23), 6644 (2014)]. The previous bilinear transformation is replaced with a general multi-linear transformation. This gives us flexibility to handle more general grating profiles while retaining the simplicity of the linear transformation. We give some general, simple, and empirical rules on composing the piecewise linear transformation function. Both enlarged convergence range and increased groove depth-to-period ratio, which can be at least 10, are achieved with the parameterized C method for a wide class of smooth grating profiles.

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Cryogenic etching of nano-scale silicon trenches with resist masks

Cited by 30 publications

References 15 publications

Polymer masks for structured surface and plasma etching

Polymer masks for structured surface and plasma etching

Cryogenic Etching of High Aspect Ratio 400-nm Pitch Silicon Gratings

Enlarging applicability domain of the C method with piecewise linear parameterization: gratings of deep and smooth profiles

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