Cryogenic characteristics of GaAs-based near-infrared light emitting diodes

Abstract

High performance infrared light emitting diodes (LEDs) have drawn wide attention because of their significant applications in biomedicine, agriculture, aquaculture, night vision security systems and scientific researches. Due to the rapid development of infrared up-conversion devices, especially in the terahertz region, the studies on the GaAs-based infrared LEDs operating at low temperature (<20 K) are quite needed. In this paper, two representative GaAsbased LEDs (GaAs/AlGaAs double heterostructure LED (DH-LED) and GaAs (InGaAs)/ AlGaAs quantum well infrared LED (QW-LED)) are fabricated and characterized with electroluminescence (EL) spectroscopy and electroluminescence efficiency (ELE) at different temperatures. The ELE of the QW-LED is about 70% higher at low temperatures (<150 K) but lower at high temperatures (>150 K) than that of the DH-LED. A developed rate equation method is used to analyze the ELE superiority of the QW-LED. Finally, the surface EL uniformity of the two LEDs is studied by using the charge coupled devices imaging. This study provides a guidance to choose and design LED structures for different operation temperatures.

Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications

“…GaAs-based Light Emitting Diodes produce light of wavelength lying in infrared region (937nm), which are used in remote controllers, medical treatment applications, cameras, and other applications. There are various semiconductors that can be used to produce infrared emission by altering the degree of doping, but GaAs is still one of the semiconductors that is most commonly employed, owing to its comparatively inexpensive cost and long life [23,24]. GaN based Light Emitting Diodes are widely used for fabricating optical devices in visible short wavelength and UV region.…”

“…GaN based Light Emitting Diodes are widely used for fabricating optical devices in visible short wavelength and UV region. LEDs made up of GaN emits blue light around 430nm at 20mA and blue being one of the primary colour is significant for the emission of white light [23]. GaN based LEDs are useful in full colour LED displays, white LEDs, and blue laser Most white LEDs are essentially a blue LED embedded in a yellow phosphor that convert some of the blue to yellow.…”

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

“…The ELE increases first and then decreases with the drive current at the same temperature. The efficiency drop with larger injection current is mainly caused by the increase of the nonradiative recombination (SRH recombination and Auger recombination) [21,22]. The peak point of the ELE shifts to lower current as temperature increases because the nonradiative recombination increases sharply with temperature.…”

High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors

“…Internal optical losses in AlGaAs/GaAs light-emitting diodes (LEDs) are reduced either by removing the growth GaAs substrate after the growth process [1][2][3][4][5] or by forming a Bragg reflector (BR) based on a multilayer Al 0.9 Ga 0.1 As/Al 0.1 Ga 0.9 As heterostructure between the substrate and the active LED region [6,7].…”