Crossover to Negative Dielectric Constant in Perovskite PrMnO<sub>3</sub>

Balu, Santhosh Kumar; Shanker, N. Praveen; Manikandan, M.; Aparnadevi, N.; Mukilraj, T.; Manimuthu, P.; Venkateswaran, C.

doi:10.1002/pssa.202000230

Cited by 9 publications

(4 citation statements)

References 30 publications

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“…This is attributed to the plasmonic response of delocalized electrons within the materials and can be modulated by it [33]. This demonstrates their additional potential for unique optical and microwave applications such as microwave circuits, optical switches, and modulators, antenna components, in electromagnetic intereference shielding and coil-less electric inductors [34].…”

Section: Elastic Properties Of Ytterbium Chalcogenidesmentioning

confidence: 91%

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

Eressa,

Gerbi

2024

Advances in Condensed Matter Physics

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In this study, the structural, electronic, optical, elastic, and thermodynamic properties of Ytterbium chalcogenides YbX (X = S, Se and Te) were computed within the first principles using generalized gradient approximation (GGA) as implemented in the pseudopotential plane wave approach. The equilibrium total energy for YbX (X = S, Se, and Te) was calculated as a function of the energy cutoff, k-point grid, and lattice parameter. An optimized lattice parameter of 5.6, 5.66, and 6.136 Å were calculated for YbS, YbSe, and YbTe, respectively. The energy band gaps of YbS, YbSe, and YbTe computed are 1.14, 1.32, and 1.48 eV, respectively. In addition, the low band gap (less than 3 eV) for ytterbium chalcogenides indicated that they may have potential applications in photovoltaic cells and laser diodes. Moreover, the negative dielectric function value for a certain frequency range indicates that these compounds are suitable for specific optical and microwave circuit applications. The result of elastic and thermodynamic property computation reveals that ytterbium chalcogenides are mechanically and thermodynamically stable, which can be useful in a variety of electronic device applications.

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Section: Elastic Properties Of Ytterbium Chalcogenidesmentioning

confidence: 91%

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

Eressa,

Gerbi

2024

Advances in Condensed Matter Physics

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“…In recent years, there has been growing interest in metamaterials exhibiting this property. Potential applications of metamaterials with negative dielectric constants include sensors, antennas, wireless transmission systems, and capacitors (Qu et al, 2019;Balu et al, 2020;Liu et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Frequency Dependent Negative Dielectric Behavior in Parylene C Based Composite Films

Guduloglu,

Kurnaz,

Seydioglu

et al. 2024

JAASCI

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Dielectric materials are an important research topic for many applications today. Polymers are among the prominent dielectrics due to their durability, high ionic conductivity and low dielectric losses. This study investigates the dielectric properties of Parylene C (PAC)-based composite films. Capacitance and dissipation factor values are measured. Dielectric permittivity and losses are calculated. Negative capacitance and negative dielectric constant are observed, and resonant frequency values are compared. Activated carbon doping significantly impacts the resonant frequencies of the films. Doped samples exhibit higher positive and negative resonant frequencies (2.2560 MHz and 2.2593 MHz) compared to undoped counterparts (2.1952 MHz and 2.2015 MHz). Polarization further increases resonant frequencies, alongside dielectric permittivity and dissipation factor with permittivity experiencing a more pronounced increase. Post-polarization, doped samples display resonant frequencies of 2.3727 MHz and 2.3761 MHz, while undoped samples reach 2.3658 MHz and 2.3727 MHz. A comprehensive analysis of impedance, resistance, and reactance values reveals insights into the composite film's behavior. Crucially, throughout the measurements, the composite films display a consistent inductive response at frequencies above their resonance frequencies. Understanding the mechanisms behind this inductive response could open up new possibilities for the use of these films in advanced electronic devices and circuits.

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“…To overcome the challenge with composites, efforts were made to find out systems with homogeneous composition i.e. mono-phase materials [16][17][18]. Negative permittivity in the radio frequency range has been reported in several undoped and doped metal oxides [19,20] and Perovskite oxides [17,21].…”

Section: Introductionmentioning

confidence: 99%

“…mono-phase materials [16][17][18]. Negative permittivity in the radio frequency range has been reported in several undoped and doped metal oxides [19,20] and Perovskite oxides [17,21]. Among all investigated Perovskite oxides, system La 1-x Sr x MnO 3 has been widely investigated.…”

Section: Introductionmentioning

confidence: 99%

High temperature study of dielectric and electrical conduction behaviour of La₂NiO₄

Katheriya,

Upadhyay

2023

Phys. Scr.

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Materials showing negative permittivity have attracted considerable attention from researchers on account of their notable applications in electronic and electromagnetic devices. Discovering materials exhibiting negative permittivity is a challenging task. Very few single-phase oxides have been reported as negative permittivity materials. In this work, we have attempted to investigate the dielectric properties of La2NiO4 to explore the possibility of negative permittivity. To achieve the goal, powder, and ceramic of La2NiO4 have been synthesized by the conventional solid-state reaction method. Rietveld refinement of the X-ray diffraction data studies has confirmed the tetragonal structure and space group I4/mmm. The Dielectric properties and AC conductivity have been studied in the frequency range of 20 Hz–2 MHz and over a wide temperature range (30 °C–600 °C). The permittivity of La2NiO4 is found to be negative at all the measured frequencies and temperatures. The Drude model fitted the experimental data very well, suggesting that negative permittivity behavior can be assigned to the plasma oscillation of conducting electrons. The trend of AC conductivity with frequency is similar to the skin effect observed in metals. The variation of DC conductivity with temperature indicated small polaron hopping conduction mechanism. Analysis of reactance (Z′′) suggested inductive electrical character in the tested frequency and temperature range. Room temperature negative permittivity behavior of La2NiO4 makes it a potential candidate for practical electronic and electromagnetic devices that work in the Radio-frequency range. Furthermore, this work will add a new member to the family of Perovskite oxides showing tunable negative permittivity.

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Crossover to Negative Dielectric Constant in Perovskite PrMnO₃

Cited by 9 publications

References 30 publications

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

Frequency Dependent Negative Dielectric Behavior in Parylene C Based Composite Films

High temperature study of dielectric and electrical conduction behaviour of La₂NiO₄

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Crossover to Negative Dielectric Constant in Perovskite PrMnO3

Cited by 9 publications

References 30 publications

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

Electronic, Elastic, Optical, and Thermodynamic Properties Study of Ytterbium Chalcogenides Using Density Functional Theory

Frequency Dependent Negative Dielectric Behavior in Parylene C Based Composite Films

High temperature study of dielectric and electrical conduction behaviour of La2NiO4

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Product

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Crossover to Negative Dielectric Constant in Perovskite PrMnO₃

High temperature study of dielectric and electrical conduction behaviour of La₂NiO₄