Crossover point of the field effect transistor and interconnect applications in turbostratic multilayer graphene nanoribbon channel

Abstract

The electrical transport properties of a turbostratic multilayer graphene nanoribbon (GNR) with various number of layers (1–8 layers) were investigated using a field effect transistor with a single GNR channel. In the turbostratic multilayer GNR with 5 layers or less, the carrier mobility and Ion/Ioff ratio in the FETs were improved by slightly increasing the conductance with increasing the number of layers, meaning that the excellent semiconducting characteristic. The improvement of the carrier transport properties promotes by the turbostratic stacking structure. In the turbostratic multilayer GNR with 6 layers or more, although the Ion/Ioff ratio degraded, the conductance extremely improved with increasing the number of layers. This indicates that the turbostratic multilayer GNR with thicker number of layers becomes the significantly lower resistivity wire as a metallic characteristic. We revealed that the crossover point of the physical properties between the semiconducting and metallic characteristics is determined by the strength to screen the surrounding environment effects such as charged impurity on the substrate. Our comprehensive investigation provides a design guidance for the various electrical device applications of GNR materials.

Preparation, Bandgap Engineering, and Performance Control of Graphene Nanoribbons

“…In addition, in pursuit for GNR-FETs with superior electronic properties, Negishi et al reinvented the tradition structure of GNR-FETs, creating multilayer GNR channels. 153 A threshold between high I ON / I OFF ratios and high on-state conductance was posted by a fivelayer GNR channel in such GNR-FETs. It presented a trading behavior for high conductance to degrade I ON /I OFF as layers grew thicker (Figure 12h), while the electron mobility displayed an ongoing increase of up to 1500 cm 2 V −1 s −1 for six-layer GNR-FETs (Figure 12i).…”

“…Though FET based on 7-AGNR fabricated via this transfer-free method exhibited a low I ON / I OFF ratio of around 10, it brought infusive motives to overcome the bottleneck in preparation of GNR-FETs. In addition, in pursuit for GNR-FETs with superior electronic properties, Negishi et al reinvented the tradition structure of GNR-FETs, creating multilayer GNR channels . A threshold between high I ON / I OFF ratios and high on-state conductance was posted by a five-layer GNR channel in such GNR-FETs.…”

“…(i) Curves of GNR-FET carrier mobility as a function of number of GNR channel layers. Reproduced with permission under a Creative Commons CC-BY License () from ref . Copyright 2021 Springer Nature Limited.…”

Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure

“…19) Some methods have been proposed to reduce the effect of the impurities on the transport properties of graphene, such as using a different substrate instead of the commonly used SiO 2 20,21) or implementation of colloidal quantum dots. 22,23) In addition to these methods, the multilayer graphene with a turbostratic structure has suitable electronic structure [24][25][26] which could offer a robust solution to the impurity-related challenges in graphene-based devices.…”