2006
DOI: 10.1063/1.2165581
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Crossover in heating regimes of thermally assisted magnetic memories

Abstract: This work investigates the tunnel junction heating process for micrometer and submicrometer size junctions to be used in a thermally assisted magnetic random access memories write scheme. The time evolution of the heating process was obtained from experimental measurements and numerical thermal simulations. Simulation results show an initial temperature regime at very short pulse widths associated with the intrinsic heating of the junction (adiabatic regime). In this regime, for the same power density, the tem… Show more

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Cited by 25 publications
(17 citation statements)
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“…It is of the order of 10-20 ns. As a result, the write cycle time can be of the order of 30 ns (Sousa et al, 2006). Figure 2.9 illustrates the implementation of the thermal assistance combined with STT (TAS þ STT).…”
Section: Magnetic Random Access Memoriesmentioning
confidence: 99%
“…It is of the order of 10-20 ns. As a result, the write cycle time can be of the order of 30 ns (Sousa et al, 2006). Figure 2.9 illustrates the implementation of the thermal assistance combined with STT (TAS þ STT).…”
Section: Magnetic Random Access Memoriesmentioning
confidence: 99%
“…Thermal assistance effects have been reported in conventional MRAM, where the magnetization reversal was carried out with Oersted fields. [3][4][5] Recent numerical and theoretical studies suggest the considerable thermal effects on STT switching. [6][7][8][9] However, the feasibility of thermally assisted switching in practical STT-MRAM has not been clarified properly.…”
Section: Introductionmentioning
confidence: 99%
“…These statistical methods are undermined by their questionable description of the switching phenomena and the influence of the temperature thereon. Advanced models like the numerical solving of the heat diffusion equation using finite element codes 11 have usually large uncertainties because they often rely on thermal conductivities that are loosely known at the nanoscale.…”
Section: Introductionmentioning
confidence: 99%