2018
DOI: 10.1021/acs.jpclett.8b01112
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Crossover from Hopping to Band-Like Charge Transport in an Organic Semiconductor Model: Atomistic Nonadiabatic Molecular Dynamics Simulation

Abstract: The mechanism of charge transport (CT) in a 1D atomistic model of an organic semiconductor is investigated using surface hopping nonadiabatic molecular dynamics. The simulations benefit from a newly implemented state tracking algorithm that accounts for trivial surface crossings and from a projection algorithm that removes decoherence correction-induced artificial long-range charge transfer. The CT mechanism changes from slow hopping of a fully localized charge to fast diffusion of a polaron delocalized over s… Show more

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Cited by 80 publications
(156 citation statements)
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“…46,47 Through direct propagation of the hole wavefunction, critical quantities are evaluated, such as the hole drift mobility, and a detailed picture of polaron dynamics is promptly sketched, hence allowing the differentiation between hopping and band-like conductivity mechanisms. 48 Our basic findings indicate that the peripheral substitution has a staggering effect on charge transfer. The differences in the side chain length and the morphology lead to variations in the solid state packing that directly alter the intracolumnar stacking patterns and the associated hole charge transfer integrals.…”
Section: Introductionmentioning
confidence: 69%
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“…46,47 Through direct propagation of the hole wavefunction, critical quantities are evaluated, such as the hole drift mobility, and a detailed picture of polaron dynamics is promptly sketched, hence allowing the differentiation between hopping and band-like conductivity mechanisms. 48 Our basic findings indicate that the peripheral substitution has a staggering effect on charge transfer. The differences in the side chain length and the morphology lead to variations in the solid state packing that directly alter the intracolumnar stacking patterns and the associated hole charge transfer integrals.…”
Section: Introductionmentioning
confidence: 69%
“…The key assumptions of the FOB-SH methodology are that the full many-body electronic wavefunction can be replaced by a one-particle wavefunction for the excess charge carrier, with the latter expressed in a quasi-diabatic basis made up of orthogonalized fragment molecular orbitals (FMO), and that electronnuclei dynamics are approximated by a mixed quantum-classical scheme, with explicit treatment of diagonal and off-diagonal electron-phonon coupling. [46][47][48] In the FOB-SH method, an excess charge carrier is treated by a time-dependent one-particle wavefunction C(t) which is expanded on a basis of orthogonalized FMOs:…”
Section: Methodsmentioning
confidence: 99%
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“…When disorder is so strong that the carriers become localized on a single molecular site, Eq. (1) ceases to be valid and a transition to a thermally activated hopping regime is expected [34][35][36][37] . The breakdown of the TL regime can be estimated by setting L ≈ a in Eq.…”
Section: In Inorganic Semiconductors Including the Observation Of Anmentioning
confidence: 99%
“…Using Marcus theory in this manner is similar to other recent high throughput methods which have evaluated structures using these types of properties. 11 As an assessment of its predictive power against a more complete description of charge transport, we carried out comparisons of Marcus theory against mobilities from non-adiabatic molecular dynamics [36][37][38][39][40][41] (see Table S2 and Fig. S4, ESI † for details) for a series of functionalised tetracenes.…”
Section: Electron Mobility Calculationsmentioning
confidence: 99%