Crossover from Fermi Liquid to Multichannel Luttinger Liquid in High-Mobility Quantum Wires

Abstract

We investigate the electrical conductance of long, high-mobility quantum wires formed by the split-gate technique, which allows for adjustment of the wire width and the number of one-dimensional electron subbands, n. In wires with 3<or=n<or=8, a logarithmic temperature dependence of the conductance is observed for 1<T<10 K, which reaches as much as 30% of the Drude conductance. In even narrower wires, the logarithmic dependence changes to a power-law variation. Our observations are shown to be in good agreement with recent theoretical studies, which attribute the logarithmic term to interaction effects in a weakly disordered quasi-one-dimensional conductor. This interaction correction is associated with the emergence of a crossover from a quasi-one-dimensional weakly disordered Fermi liquid to a multichannel Luttinger liquid.

Anomalous behavior of the quasi-one-dimensional quantum material Na2OsO4 at high pressure

“…High-pressure XAS experiments were performed for osmium by investigating the X-ray absorption near edge structure (XANES) at beamline 20-BM-B of the APS. A panoramic DAC 12 with 400 μm diamonds was used to collect spectra at both the L 2 and L 3 absorption edges for the Na 2 OsO 4 powders. In order to avoid contamination of the XANES spectra by Bragg peaks from the diamond anvils, XANES measurements were performed in transmission geometry where the X-ray beam goes through a beryllium gasket.…”

“…1e). As mentioned above, the interacting fermions in one spatial dimension do not obey FL theory; however, the possibility of the deconfinement transition induced by interchain hopping [11] or a transition to a weakly disordered Fermi liquid [12] for more higher pressures cannot be neglected as  alters with pressure strongly towards FL state.…”

The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si–SiO2 interface

“…The numerical self-consistent approach can be used to solve the coupled equations, which accurately predicts the electrostatic potential profile (band bending) arising from various sources (such as ionized dopants, surface charges, and external gates) [5][6][7]. Such self-consistent solutions offer information on spatial-dependent observables, such as wavefunctions and electron density [8], which can be used to estimate the size of a quantum well [9,10].…”

Finite-Volume Self-Consistent approach for electronic properties at ultra-low temperatures: Theory and application to 1D electron gas at the Si-SiO2 interface

“…Furthermore, quantitative knowledge from the coupled equations on the quantized energy ladder, penetration of wavefunctions (envelope functions) in the potential barrier (oxide), and occupation factors can provide essential information on the interpretation of experimental data and optimization of nanoscale semiconductor devices [9][10][11][12][13]. In addition, the coupled equations offer information on spatial-dependent observables, such as wavefunctions and electron density [14], which can be used to estimate the size of a quantum well [15,16].…”