Abstract:Electron conduction mechanisms in CoFeB (0.8-10 nm)/MgO (3nm)/CoFeB (4.2 nm) magnetic tunnel junctions (MTJs) have been investigated in detail. A clear crossover from direct tunnelling to trap assisted Fowler Nordheim (FN) tunneling is observed with increasing bias voltage in all the pristine MTJs. In contrast, FN-like tunneling is completely suppressed in vacuum annealed MTJs, which plausibly indicates diffused interfaces and enhanced trap state density in MgO barrier. In annealed MTJs, beyond the direct tunn… Show more
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