Crossover behavior of the anomalous Hall effect in 
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Liu, Xinyu; Dong, Sining; Riney, Logan; Wang, Jiashu; Wang, Yong‐Lei; Zheng, Ren‐Kui; Bac, Seul Ki; Kossut, J.; Dobrowolska, M.; Assaf, Badih A.; Furdyna, J. K.

doi:10.1103/physrevb.103.214437

Cited by 3 publications

(2 citation statements)

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“…The density of delocalized carriers for samples S1 and S2 was estimated from their Curie temperatures as 3.8 × 10 19 and 2.4 × 10 19 cm −3 , respectively in an earlier publication [17] . These parameters lead to mobilities of 5.2 × 10 −6 and 4.1 × 10 −3 cm 2 /(V•s), respectively.…”

Section: Results and Analysismentioning

confidence: 99%

“…Our development of the magnetic semiconductors Ga 1-x Mn x As 1-y P y that can retain a ferromagnetic state across the metal-insulator transition enables studies of this physics in the presence of magnetism. In recent studies carried out on a series of ferromagnetic semiconductor Ga 1-x Mn x As 1-y P y alloys with high phosphorus content we have observed that the number of itinerant holes (i.e., holes that contribute to the Hall effect) is significantly lower than the total hole concentration [17] . A large fraction of holes arising from Mn acceptors is thus localized at the acceptor sites.…”

Section: Introduction Ln [ρ (T)] ∼ (T  /T) /(D+)mentioning

confidence: 96%

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Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors

Liu¹,

Riney²,

Guerra³

et al. 2022

J. Semicond.

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Ferromagnetic semiconductor Ga1–x Mn x As1–y P y thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers. In this regime, we report a colossal negative magnetoresistance (CNMR) coexisting with a saturated magnetic moment, unlike in the traditional magnetic semiconductor Ga1– x Mn x As. By analyzing the temperature dependence of the resistivity at fixed magnetic field, we demonstrate that the CNMR can be consistently described by the field dependence of the localization length, which relates to a field dependent mobility edge. This dependence is likely due to the random environment of Mn atoms in Ga1–x Mn x As1–y P y which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field.

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Section: Results and Analysismentioning

confidence: 99%

Section: Introduction Ln [ρ (T)] ∼ (T  /T) /(D+)mentioning

confidence: 96%