Crossbar Architecture for Memristor Based Memory Simulation

Abstract

The acoustoelectric effect is the generation of a acoustoelectric current in a non-biased device by a piezoactive acoustic wave. This effect has recently attracted the attention of researchers as possible method to control the motion of massive objects in the quantum regime. We suggest use this effect for development of high sensitive nanoelectronic sensors. The sensitivity could be increase through the use of modulation mode of operation based on the acoustic pilot signal and the transition from quasi-stationary measurement to measurement at the modulation frequency. The acoustic delay line based on shear-horizontal acoustic wave of zero order (SH 0 ) with resonant frequency 2.77 MHz in Y-X LiNbO 3 plate was produced. The nanostructure consisting of nanowire with size 20nm x 180nm was placed in the center between IDTs. The volt-ampere characteristics of this nanowire in presence and at the absence of the acoustic wave were meazured by picoampermeter. The analysis has shown that presence of piezoactive acoustic wave is influenced on electric current in a nanowire.Keywords: acoustoelectric effect, nanowire, volt-ampere characteristics, shear-horizontal acoustic wave, lithium niobate plate, sensor applications Experimental Fabrication of the Acoustic Delay LineThe acoustic delay line and the system of electrodes supplied to the nanostructure were produced as follows. First, the lithium niobate substrate was washed in a centrifuge with a stream of isopropyl alcohol and acetone, and then wiped with dimethylformamide. Then, a Shipley S1813 resist was applied by the centrifuge, after that it was dried for 5 minutes on HotPlate at a temperature of 115 0 C. The corresponding photomask was superimposed on the sample in the MA-750 combining unit and the structure was exposed to UV radiation at a wavelength of 400 nm for 75 seconds at an intensity of 50 mW /cm 2 . Next, the sample was placed for 1 minute in a KOH-based developer with a concentration of 0.01 mg/ml. After that, thermal evaporation of 100 nm of titanium and 30 nm of gold on top of it was sputtered through the obtained photoresist mask. Then, using the lift-off method, the sample was freed from the remnants of the undeveloped photoresist, and the result was a structure of IDT and supply electrodes for the nanostructure. The geometry size of obtained delay line was 11mm x 13mm with substrate thickness 0.35mm. Fabrication of the Central NanostructureAfter production of the delay line, the corresponding nanostructure was placed between the IDT. To produce it, we used an electron lithography method with a two-layer overhanging resistive mask. This approach allows to avoid low-quality edges due to the contact of the sprayed metal with the walls of the photoresist and to obtain rather sharp boundaries of metal nanostructures [6]. In result of modified method we obtained central nanostructure with geometry size 80x80 m 2 .This structure consisted of eight nanowires. Each nanowire was 180nm in length, 20nm in width and with thickness about 77nm (chromium -7nm, gold-50...