Cross-talk suppression in SOI substrates

Baine, Paul; Jin, Michael; Gamble, Harold; Armstrong, B.M.; Linton, D.; Mohammed, Falah

doi:10.1016/j.sse.2005.07.008

Cited by 11 publications

(7 citation statements)

References 9 publications

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“…This is a significant problem when a material with a very low doping concentration is used ͑e.g., FZ͒ as the inversion layer reduces the effective substrate resistance. 17 Gold ͑Au͒ doping has been reported to produce high resistivity silicon by other workers 18 who observed a maximum resistivity of 100 k⍀ cm. They also used a low pressure chemical vapor deposition ͑LPCVD͒ silicon nitride diffusion barrier to prevent the Au atoms from diffusing to the active layer.…”

Section: The Fabrication Of Si-si Substratesmentioning

confidence: 96%

“…This value of 3.7 ϫ 10 −13 cm 2 s −1 at 1000°C compares well to the only other diffusivity in the literature for LPCVD Si 3 N 4 , which is 3.2 ϫ 10 −13 cm 2 s −1 at the same temperature. 17 Silicon dioxide diffusion barrier.-DLTS spectra were taken from Schottky contacts fabricated on the bottom wafer separated from the Au source by a BOX layer, as in Fig. 4.…”

Section: H542mentioning

confidence: 99%

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The Development of Semi-Insulating Silicon Substrates for Microwave Devices

Jordan

Haslam

Mallik

et al. 2010

J. Electrochem. Soc.

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The concept of fully encapsulated, semi-insulating silicon (SI-Si) Czochralski silicon on insulator substrates for silicon microwave devices is presented. The experimental results show that, using gold as a compensating deep level impurity in silicon, a resistivity of 180kΩcm is achieved in this work. Sufficiently high resistivity substrates for microwave applications are obtained by depositing gold on silicon and annealing for 1 h at 1000°C . Silicon dioxide and silicon nitride are considered as diffusion barriers for use in the new technology. At 1000°C , the diffusivity of gold in plasma-enhanced chemical vapor deposited silicon nitride is ∼3.7×10−13cm2normals−1 , whereas for silicon dioxide, it is less than 6×10−14cm2normals−1 . These results imply that silicon nitride would be ineffective as a diffusion barrier in the SI-Si technology but that a 600 nm thick buried silicon dioxide might allow devices to be processed with a thermal budget of up to 15 h at 1000°C without impurity contamination.

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Section: The Fabrication Of Si-si Substratesmentioning

confidence: 96%

Section: H542mentioning

confidence: 99%

The Development of Semi-Insulating Silicon Substrates for Microwave Devices

Jordan

Haslam

Mallik

et al. 2010

J. Electrochem. Soc.

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show abstract

“…It should be noted that the pinning of the Fermi level in this way will prevent the production of an inversion layer that is sometimes produced in SOI wafers. This is a significant problem as the inversion layer reduces the effective substrate resistance in high resistivity silicon substrates with low background doping and can be a particular problem when FZ material is used in this role [14].…”

Section: Impurity Doping: the Role Of Deep Energy Levelsmentioning

confidence: 99%

The Development of Semi-insulating Silicon Substrates for Microwave Devices

Jordan¹,

Haslam²,

Mallik³

et al. 2008

ECS Trans.

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The concept of fully encapsulated, semi-insulating silicon (SI-Si) Cz-SOI substrates for silicon microwave devices is presented. Results show that, using gold as a compensating impurity, a silicon resistivity of 180 kΩcm can be achieved. Sufficiently high resistivity substrates for microwave applications are obtained by depositing gold on silicon and annealing for one hour at 1000C. Silicon oxide and silicon nitride are considered as diffusion barriers for use in the new technology. At 1000C the diffusivity of gold in PECVD silicon nitride is found to be ~ 3.7x10-13cm2s-1, whilst for silicon oxide it is less than 6x10-14cm2s-1. These results imply that silicon nitride would be ineffective as a diffusion barrier in the SI-Si technology but that a silicon oxide BOX 600nm thick might allow devices to be processed with a thermal budget of up to 15 hours at 1000C without impurity contamination.

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“…Due to the large number of grain boundaries and defects in polysilicon, it can effectively trap free carriers caused by the PSC effect, it is also compatible with mature integrated circuit (IC) manufacturing processes and has very good thermal stability [ 12 ]. Therefore, the PSC effect on HR-Si substrate can be effectively suppressed by the polysilicon carrier trap layer, and can further improve the RF performance of the substrate [ 13 ]. This method is currently widely used to eliminate the PSC effect on HR-Si on insulator (HR-SOI) substrates.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss

Zou

Huang³

et al. 2023

Micromachines

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When AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases.

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Cross-talk suppression in SOI substrates

Cited by 11 publications

References 9 publications

The Development of Semi-Insulating Silicon Substrates for Microwave Devices

The Development of Semi-Insulating Silicon Substrates for Microwave Devices

The Development of Semi-insulating Silicon Substrates for Microwave Devices

The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss

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