Cross-sectional AFM study of etching kinetics of oxidized porous silicon

Abstract

We have studied the morphology and etching kinetics of partially oxidized porous silicon films. Film morphology and thickness was measured using cross-sectional atomic force microscopy. Air and UVozone oxidized porous silicon films were etched in buffered hydrofluoric acid. The observed etching rate was much faster than expected for a bulk film. These data consist of: direct visualization of cluster formation, enhanced etching rates and subsequent analysis of the liberated nanoparticles, and consistent with a mesoporous morphology of undulating Si nanowires.