Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
B. Severin,
D. T. Lennon,
L. C. Camenzind
et al.
Abstract:The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions and each device realisation requires a different tuning protocol. We demonstrate that it is possible to automate the tuning of a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate Ge/SiGe heterostructure double quantum dot device from scratch with the same algorithm. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorith… Show more
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