Croissance cristalline en phase liquide : éléments théoriques

Garandet, J.P.

doi:10.1051/bib-sfo:2002809

Cited by 2 publications

(2 citation statements)

References 28 publications

(39 reference statements)

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“…The key parameter is the geometric configuration of the system and the number of atomic neighbours. The incorporation is all the more difficult as the interface is smooth as on {111} facets [12]. In the case of a facetted {111} Si solid-liquid interface, two theoretical laws are proposed in the literature.…”

Section: Introductionmentioning

confidence: 99%

{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

{1 1 1} facet growth laws and grain competition during silicon crystallization

Stamelou

Tsoutsouva

Riberi-Béridot

et al. 2017

Journal of Crystal Growth

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“…Indeed, solutes with partition coefficient lower than 1 are rejected in the liquid at the solid-liquid interface, which changes, locally, the thermodynamic equilibrium. The rejected solute accumulates in a limited layer neighboring to the interface, the thickness of this layer can be expressed as [7] :…”

Section: Introductionmentioning

confidence: 99%

Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O)

Riberi-Béridot

Tsoutsouva

Regula

et al. 2017

Journal of Crystal Growth

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Undercooling during the solidification of silicon is an essential parameter that plays a major role in grain nucleation and growth. In this study, the undercooling of the solid-liquid interface during growth of multi-crystalline silicon samples is measured for two types of silicon: pure, and containing light elements (carbon and oxygen) to assess and compare their impact on crystal growth. The solid-liquid interface undercooling is measured using in situ and real time X-ray synchrotron imaging during solidification. As a subsequent step, ex situ Electron Backscattered Diffraction (EBSD) is performed to obtain information about the crystalline structure, the grain orientation and the grain boundary character. Two main conclusions arise: i) the undercooling of the global solid-liquid front increases linearly with the growth rate which indicates uniform attachment, i.e. all atoms are equivalent, ii) the same trend is observed for pure silicon and silicon containing carbon and oxygen. Indeed, the growth law obtained is comparable in both cases, which suggests that the solutal effect is negligible as concern the undercooling in the case of a contamination with carbon (C) and oxygen (O). However, there is a clear effect of the impurity presence on the crystalline structure and grain boundary type distribution. Many grains nucleate during growth in samples containing C and O, which suggests the presence of precipitates on which grain nucleation is favored.

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Croissance cristalline en phase liquide : éléments théoriques

Cited by 2 publications

References 28 publications

{1 1 1} facet growth laws and grain competition during silicon crystallization

{1 1 1} facet growth laws and grain competition during silicon crystallization

Growth undercooling in multi-crystalline pure silicon and in silicon containing light impurities (C and O)

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