CrN thin films with ultra-low magnetoresistance prepared via solution processing for large-area applications

Hui, Zhenzhen; Wei, Renhuai; Tang, Xianwu; Zhu, Xuetao; Ouyang, Zhenhua; Dai, Jianming; Song, Wenhai; Luo, Hongmei; Zhu, Xuebin; Sun, Yan

doi:10.1016/j.jallcom.2016.12.048

Cited by 9 publications

(2 citation statements)

References 38 publications

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“…With thickness increasing, the disorders in the CrN thin films are decreased due to the improved stoichiometric ratio and the enlarged grain size, resulting in the smaller MR value as thickness increases. The results show that the CrN thin films have the high sensitivity, larger than 10 −2 K −1 at 5 K, and low magnetoresistance, less than 1%, at 2 K under 14 T, which is comparable to the commercial sensors CERNOX in previous reports [10][11][12][13]41].…”

Section: The Zero-field Sensitivity and Magnetoresistance Under High supporting

confidence: 77%

Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

Hui

Zuo

et al. 2020

Materials

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Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5–350 K, all samples exhibited semiconductor-like properties with dρ/dT < 0. For the range above and below the Néel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10−2 K−1 at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness.

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Section: The Zero-field Sensitivity and Magnetoresistance Under High supporting

confidence: 77%

Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

Hui

Zuo

et al. 2020

Materials

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“…The ρ 300K of CNF/700, CNF/800, and CNF/900 are 338.6, 246.7, and 139.4 µΩ•cm, respectively. The resistivity decreases with the increase of nitrogen content, grain size, and crystalline quality [37]. Due to the reduced carrier scattering at the grain boundary, the ρ 300K of the prepared CNF thin films is much lower than that of other anti-perovskite bulks [38].…”

Section: Electrical Transport Propertiesmentioning

confidence: 96%

Synthesis and Physical Properties of Antiperovskite CuNFe3 Thin Films via Solution Processing for Room Temperature Soft-Magnets

et al. 2020

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Antiperovskite CuNFe3 (CNF) thin films have been successfully prepared by chemical solution deposition (CSD) for the first time. They are versatile in many applications as an iron-based nitride. The preparation of pure CNF thin films is a challenging work for the complexity of the phase diagram. Herein, the CNF thin films are phase-pure and polycrystalline. Annealing temperature effects on the microstructures and physical properties were investigated, showing that the CNF thin films are metallic and can be considered as a candidate for room temperature soft-magnets with a large saturated magnetization (Ms) and a low coercive field (Hc). At high temperatures, the electrical transport behavior of CNF thin films presents a low temperature coefficient of resistivity (TCR) value, while the electron–electron interaction is prominent at low temperatures. The reported solution methods of CNF thin films will enable extensive fundamental investigation of the microstructures and properties as well as provide an effective route to prepare other antiperovskite transition-metal nitride thin films.

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The role of Cr on the electronic and optical properties of InCrN: A first principles study

Carvalho

Miranda

Silva

2018

Journal of Crystal Growth

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CrN thin films with ultra-low magnetoresistance prepared via solution processing for large-area applications

Cited by 9 publications

References 38 publications

Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

Synthesis and Physical Properties of Antiperovskite CuNFe3 Thin Films via Solution Processing for Room Temperature Soft-Magnets

The role of Cr on the electronic and optical properties of InCrN: A first principles study

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