transparent, and conductive materials, such as poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT:PSS), [14,15] carbon nanotubes (CNTs), [16,17] and silver nanowires (AgNWs), [18,19] have been developed as alternatives to ITO, for application in next-generation flexible and transparent optoelectronic devices with improved electrical performance, optical transmittance, and flexibility. [20,21] AgNWs are considered the most promising material for FTEs owing to their high optical transparency, high electrical conductivity, inherent mechanical flexibility, and facile solution processability. [22] A high-resolution and facile method for patterning of AgNWs is necessary for applying AgNW FTEs to the fabrication of flexible and transparent optoelectronic devices. Reported methods for patterning AgNW electrodes include shadow-mask printing, [23][24][25] gravure printing, [26,27] reverse-offset printing, [28] laser-ablation processes, [29,30] photolithography using a photoresist (PR), [31][32][33][34][35] and inkjet printing. [36] Shadow-mask printing is used for fine patterning of AgNW electrodes. However, this technique has several drawbacks, including: 1) the use of photolithography methods that require toxic chemicals and a reactive ion etching (RIE) process for fabricating the shadow mask; 2) repeated application of a complex wet or dry etching process whenever the design of the shadow mask is changed; 3) difficulty in fabricating high-resolution shadow masks (i.e., thin films) with a high aspect ratio (length-to-width ratio) because they are easily torn and broken; 4) difficulty in creating shapes with a hole in a closed curve (i.e., 0, 6, P, and O) using shadow masks; and 5) penetration of the AgNW solution by capillary force between the shadow mask and substrate, resulting in low line-edge resolution. Therefore, gravure printing and reverseoffset printing are considered alternative methods for highresolution and large-area patterning of AgNW electrodes using AgNW inks. However, these methods require careful optimization of the correlations among the ink composition, rheological properties, and printing process parameters. Moreover, the printing equipment used for patterning AgNW electrodes is expensive and complex. Further, inkjet printing is a maskfree method that allows direct patterning on various substrates. However, it is difficult to print AgNWs with high aspect ratio Patterning of silver nanowires (AgNWs) used in fabricating flexible and transparent electrodes (FTEs) is essential for constructing a variety of optoelectronic devices. However, patterning AgNW electrodes using a simple, inexpensive, high-resolution, designable, and scalable process remains a challenge. Therefore, herein a novel solvent-free photolithographic technique using a UV-curable pressure sensitive adhesive (PSA) film for patterning AgNWs is introduced. The UV-curable PSA film can be selectively patterned by photopolymerization under UV exposure through a photomask. The AgNWs embedded in the non-photocured adhesive areas of t...