Critical thickness in the HgCdTe/CdZnTe system

Berding, M. A.; Nix, W.D.; Rhiger, David R.; Sen, Sanghamitra; Sher, A.

doi:10.1007/s11664-000-0204-3

Cited by 32 publications

(22 citation statements)

References 6 publications

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“…with low zinc concentration, the lattice constant is assumed to be the same as for HgCdTe [7]: Mechanical properties of MCT layers were evaluated from the microhardness measurements by the Vickers hardness test, which was performed with a Shimadzu HMV-2000. Data have been summarized in Table 2.…”

Section: Characterization Of Mct-based Heterostructuresmentioning

confidence: 99%

Narrow-gap piezoelectric heterostructure as IR detector

Sizov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3-5 μm) infrared spectral range without cryogenic cooling to achieve performance level D * =. The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties.

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Section: Characterization Of Mct-based Heterostructuresmentioning

confidence: 99%

Narrow-gap piezoelectric heterostructure as IR detector

Sizov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…For polycrystalline material one would often use isotropic average elastic constants according to the Voigt [72] or Reuss [73] model. The values obtained from these models for Young's modulus, Poisson's ratio, shear modulus, bulk modulus and Lamé's constant, using the room-temperature C ij values presented in Figure 8.7, are given in Table 8.3 for HgTe and CdTe, and can be compared to the approach of Berding et al [74] for films oriented in the (111) direction, for which values are also given.…”

Section: Elastic Parameter Valuesmentioning

confidence: 99%

Mechanical and Thermal Properties

Martyniuk¹,

Dell²,

Faraone³

2010

Mercury Cadmium Telluride

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“…1 and several mathematical models formulated to describe this can be found in Refs. [1][2][3][4][5][6][7][8][9][10][11][12]. The existence of a critical thickness for dislocation generation in thin films was proposed by Frank and Van der Merwe.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] Some of them apply an iterative solution based on Newton-Raphson method for solving Eq. (6).…”

Section: Introductionmentioning

confidence: 99%

On the exact analytical solution of some families of equilibrium critical thickness transcendental equations

2014

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The problem of finding an exact analytical closed-form solution of some families of transcendental equations, which describe the equilibrium critical thickness of misfit dislocation generation in epitaxial thin films, is studied in some detail by the Special Trans Functions Theory (STFT). A novel STFT mathematical approach with an analytical closed-form solution is presented. Structure of the STFT exact solutions, numerical results and graphical simulations confirm the validity of the basic principle of the STFT. The proposed STFT analytical approach shows qualitative improvement in theoretical sense (a novel gradient coefficient genesis), and, in accuracy when compared to the conventional analytical and numerical methods.

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Critical thickness in the HgCdTe/CdZnTe system

Cited by 32 publications

References 6 publications

Narrow-gap piezoelectric heterostructure as IR detector

Narrow-gap piezoelectric heterostructure as IR detector

Mechanical and Thermal Properties

On the exact analytical solution of some families of equilibrium critical thickness transcendental equations

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