Critical Terrace Width for Two-Dimensional Nucleation during Si Growth on Si(111)-(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:math>) Surface

Di, Rogilo; Li, Fedina; Kosolobov, S. S.; Ranguelov, Bogdan; Av, Latyshev

doi:10.1103/physrevlett.111.036105

Cited by 32 publications

(18 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Earlier it was shown that the two-dimensional island growth kinetics at the Si(111) surface are characterized by the diffusion-limited regime at a temperature range of 720-1090 o C [60,61]. The critical nucleus size i * was estimated in the range of 1-12 atoms at a low temperature range of 720- Our experimentally obtained value of the critical nucleus size (19-22 atoms) agrees within the error limits of these previously reported values.…”

Section: Surface Kineticssupporting

confidence: 84%

“…The rate-limiting kinetics can be characterized as diffusion-limited (DL) or attachment-detachment limited (ADL) depending on the relative importance of the surface diffusion or the attachment-detachment of the adatoms at the step edge, respectively [50]. Earlier it was shown that the step motion on the Si(111) surface is described by the DL-kinetic regime rather than the ADL conditions [27,39,51]. On the contrary, atomic step kinetics and two-dimensional negative island nucleation on an Si(111) surface in the case of a high concentration of surface vacancies is described by the attachment-detachment kinetics, with the activation energy of the vacancy-step interaction larger than the surface diffusion barrier [12,16,52].…”

Section: Surface Kineticsmentioning

confidence: 99%

See 1 more Smart Citation

Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

et al. 2019

View full text Add to dashboard Cite

Self-diffusion and impurity diffusion both play crucial roles in the fabrication of semiconductor nanostructures with high surface-to-volume ratios. However, experimental studies of bulk-surface reactions of point defects in semiconductors are strongly hampered by extremely low concentrations and difficulties in the visualization of single point defects in the crystal lattice.Herein we report the first real-time experimental observation of the self-interstitial reactions on a large atomically smooth silicon surface. We show that non-equilibrium self-interstitials generated in silicon bulk during gold diffusion in the temperature range 860-1000 o C are annihilated at the (111) surface, producing the net mass flux of silicon from the bulk to the surface. The kinetics of the two-dimensional islands formed by self-interstitials are dominated by the reactions at the atomic step edges. The activation energy for the interaction of self-interstitials with the surface and energy barrier for gold penetration into the silicon bulk through the surface are estimated.These results demonstrating that surface morphology can be profoundly affected by surface-bulk reactions should have important implications for the development of nanoscale fabrication techniques. 2 reactions of point defects at the surfaces and interfaces become predominant and may significantly modify the properties of fabricated nanostructures [8-11]. While the properties of point defects in bulk semiconductors have been extensively studied and are well understood, little is actually known about the point defect formation, reactions, and basic mechanisms of the diffusion in the vicinity of free surfaces. At the heart of the problem lies the need for direct visualization of the single point defect diffusion in crystal bulk, which is still lacking, especially at high temperatures, where diffusion is fast compared to the imaging rate of modern atomic-scale characterization techniques such as aberration-corrected high-resolution transmission electron microscopy (HRTEM). In addition, the extremely low concentrations of point defects in silicon make their observation quite difficult. On the other hand, the direct visualization of single atoms, vacancies, and their clusters on crystal surfaces has become routine with the development of surface-sensitive techniques such as scanning tunneling (STM), atomic force (AFM), low-energy (LEEM), and reflection electron microscopy (REM). However, atomic steps that are an inherent part of all crystalline surfaces, acting as sinks for adsorbed atoms and vacancies, hamper direct experimental studies of point defect properties.This study used high-temperature (860-1000 o C) submonolayer gold deposition onto an atomically smooth large size (up to 100 μm in diameter) step-free Si(111) surface to study the interaction of the native point defects (self-interstitials and vacancies) with the surface boundary, considering the finite efficiency for the penetration, annihilation, and creation of point defects at the surface.Since it is well ...

show abstract

Section: Surface Kineticssupporting

confidence: 84%

Section: Surface Kineticsmentioning

confidence: 99%

Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

et al. 2019

View full text Add to dashboard Cite

show abstract

“…7b,c) exhibited step growth patterns similar to those observed on surfaces of inorganic [47], [48] and macromolecular [49]–[52] crystals. An example of similar structures observed on the surface of a growing trypsin crystal [53] is shown in Fig.…”

Section: Resultsmentioning

confidence: 56%

Architecture and Assembly of the Bacillus subtilis Spore Coat

et al. 2014

View full text Add to dashboard Cite

Bacillus spores are encased in a multilayer, proteinaceous self-assembled coat structure that assists in protecting the bacterial genome from stresses and consists of at least 70 proteins. The elucidation of Bacillus spore coat assembly, architecture, and function is critical to determining mechanisms of spore pathogenesis, environmental resistance, immune response, and physicochemical properties. Recently, genetic, biochemical and microscopy methods have provided new insight into spore coat architecture, assembly, structure and function. However, detailed spore coat architecture and assembly, comprehensive understanding of the proteomic composition of coat layers, and specific roles of coat proteins in coat assembly and their precise localization within the coat remain in question. In this study, atomic force microscopy was used to probe the coat structure of Bacillus subtilis wild type and cotA, cotB, safA, cotH, cotO, cotE, gerE, and cotE gerE spores. This approach provided high-resolution visualization of the various spore coat structures, new insight into the function of specific coat proteins, and enabled the development of a detailed model of spore coat architecture. This model is consistent with a recently reported four-layer coat assembly and further adds several coat layers not reported previously. The coat is organized starting from the outside into an outermost amorphous (crust) layer, a rodlet layer, a honeycomb layer, a fibrous layer, a layer of “nanodot” particles, a multilayer assembly, and finally the undercoat/basement layer. We propose that the assembly of the previously unreported fibrous layer, which we link to the darkly stained outer coat seen by electron microscopy, and the nanodot layer are cotH- and cotE- dependent and cotE-specific respectively. We further propose that the inner coat multilayer structure is crystalline with its apparent two-dimensional (2D) nuclei being the first example of a non-mineral 2D nucleation crystallization pattern in a biological organism.

show abstract

“…Some data path bottlenecks were removed in according to parallel architecture optimization technique. In result power consumption was reduced and logic stability was improved [7,[12][13]. This factors helped to use device in different areas such as propulsion engine testing [14], aircrafts, observation balloons and space satellites.…”

Section: Resultsmentioning

confidence: 99%

High speed video recording system on a chip for detonation jet engine testing

Samsonov

Samoilova

2018

MATEC Web Conf.

View full text Add to dashboard Cite

Abstract. This article describes system on a chip development for high speed video recording purposes. Current research was started due to difficulties in selection of FPGAs and CPUs which include wide bandwidth, high speed and high number of multipliers for real time signal analysis implementation. Current trend of high density silicon device integration will result soon in a hybrid sensor-controller-memory circuit packed in a single chip. This research was the first step in a series of experiments in manufacturing of hybrid devices. The current task is high level syntheses of high speed logic and CPU core in an FPGA. The work resulted in FPGA-based prototype implementation and examination.

show abstract

Critical Terrace Width for Two-Dimensional Nucleation during Si Growth on Si(111)-(7×7) Surface

Cited by 32 publications

References 24 publications

Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

Real-time observation of self-interstitial reactions on an atomically smooth silicon surface

Architecture and Assembly of the Bacillus subtilis Spore Coat

High speed video recording system on a chip for detonation jet engine testing

Contact Info

Product

Resources

About