Critical slowing down in microcanonical Ising dynamics

Dynamic Monte Carlo renormalization-group method

“…Some results obtained in one dimension [35,36] support this hypothesis. However, studies in three dimensions using Creutz's deterministic microcanonical dynamics [37] yield a value of z that "agrees with the Monte Carlo measurements as they agree among themselves" but is nevertheless slightly higher than most recent estimates (e.g. [37,38] and references therein).…”

“…However, studies in three dimensions using Creutz's deterministic microcanonical dynamics [37] yield a value of z that "agrees with the Monte Carlo measurements as they agree among themselves" but is nevertheless slightly higher than most recent estimates (e.g. [37,38] and references therein). This discrepancy could be due to the methods of estimation of z rather than to the algorithm, but to our knowledge, there exists no systematic analysis testing the limits of validity of the dynamic universality class hypothesis.…”

A Fast Algorithm To Simulate the Microcanonical Dynamics of the Ising Model

“…Using a three-dimensional lattice given by Figure 1. Details of the simulation technique and the analysis of the results can be found in a recent paper (Brower et al, 1988). Suffice to say that the dynamical critical exponent z was found to be z = 2.26 -~ 0.05, which is consistent with the dynamical critical exponent for Monte Carlo algorithms.…”

“…The program we describe is based on the earlier codes of Creutz, Moriarty, and O'Brien Creutz, Moriarty, and O'Brien, 1986) and the code used by Brower, Moriarty, Myers, Orland, and Tamayo (Brower et al, 1988 Creutz (1983Creutz ( , 1986 and Bhanot, Creutz, and Neu-berger (1984). The microcanonical Ising model consists of two sets of variables.…”

Character of the Reaction between Molecular Hydrogen and a Silicon Dangling Bond in Amorphous SiO2

“…1,17 In the presence of H 2 , reaction 1 causes the partial decay (passivation) of E′ centers in a time scale of a few hours at room temperature. 8,9,[15][16][17] This process finds a place in the general issue of passivation of many defects detrimental for applications; other important examples are the P b center, Si 3 tSi•, 6,18,19 common at the Si/SiO 2 interface in metal-oxide semiconductor (MOS) devices, and the oxygen dangling bond (O 3 tSi-O•), 2,4 which is the other fundamental paramagnetic defect in silica glass, also known as a nonbridging oxygen hole center (NBOHC).…”