In
recent years, the power conversion efficiency (PCE) of NiOx-based
perovskite solar cells (PSCs) has increased by leaps and bounds, reaching
more than 20%. However, the structure of PSCs is unstable under high
humidity, high temperature, and UV irradiation environment, which
is easily decomposed. To improve the limitations of the typical structure
of the perovskite layer, the strategy of p-type poly(9-vinylcarbazole)
(PVK) doped with a small amount of [6,6]-phenyl-C61-butyric
acid methyl (PCBM) has been developed to modify the interface between
the perovskite layer and the electron transport layer (ETL). A dense
quasi-two-dimensional structure layer is formed onto the three-dimensional
perovskite layer, and better crystallinity of perovskite with less
defects and superior contact properties at the perovskite/PCBM interface
can be obtained under PCBM-doped PVK modification, which improve perovskite
stability, boost carrier transport and extraction, and reduce carrier
recombination. Furthermore, the PCBM-doped PVK-modified layer further
boosts electron tunneling from the perovskite layer to PCBM ETL assisted
with PCBM dopants. Therefore, PCEs of Sr@NiOx-based PSCs with PCBM-doped
PVK modification were increased to 20.91 from 16.54% of the reference
PSCs. Furthermore, PSCs with PCBM-doped PVK modification show better
anti-UV, moisture, and thermal resistance.