2013
DOI: 10.1021/ja311469y
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Critical Role of Alkyl Chain Branching of Organic Semiconductors in Enabling Solution-Processed N-Channel Organic Thin-Film Transistors with Mobility of up to 3.50 cm2 V–1 s–1

Abstract: Substituted side chains are fundamental units in solution processable organic semiconductors in order to achieve a balance of close intermolecular stacking, high crystallinity, and good compatibility with different wet techniques. Based on four air-stable solution-processed naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) that bear branched alkyl chains with varied side-chain length and different branching position, we have carried out systematic studies on the relation… Show more

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Cited by 385 publications
(314 citation statements)
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“…84 The best n-channel mobility was observed for compound 1 0 b with chain branching two carbon atoms away from the conjugated backbone. 84 X-ray diffraction revealed that changes in the branching position modify solid state molecular packing leading to alteration in the grain size and thin film morphology. compound 1 0 g under low voltage operation were utilized for developing an ink-jet printed TFT device which is a step forward towards using organic materials for printed electronics.…”
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confidence: 96%
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“…84 The best n-channel mobility was observed for compound 1 0 b with chain branching two carbon atoms away from the conjugated backbone. 84 X-ray diffraction revealed that changes in the branching position modify solid state molecular packing leading to alteration in the grain size and thin film morphology. compound 1 0 g under low voltage operation were utilized for developing an ink-jet printed TFT device which is a step forward towards using organic materials for printed electronics.…”
mentioning
confidence: 96%
“…[81][82][83] The influence of device geometry on the type and amplitude of charge carrier mobilities and especially the stability of the n-channel transport were reported by several research groups. 84 Better performance of top-gated devices is frequently observed and rationalized by easier injection of charges from the source-drain electrodes as the larger active electrode area reduces contact resistance. 85,86 Top-gate OFET devices have also better stability under ambient conditions because the active layer is sandwiched in between the substrate and dielectric layers, preventing direct air exposure of the OSC.…”
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confidence: 99%
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“…The significant dependence of mobility on structure in these OSCs show that mobility can be engineered via processing and molecular design. Modelling charge transport in the new breed of high-performance OSCs [290][291][292] would seem to be an attractive area for ongoing research.…”
Section: How Mobility Is Affected By Morphological Order and Disordermentioning
confidence: 99%
“…[16,17] More recently, a number of studies have begun to elucidate the effect of precision alkyl-chain engineering by shifting the branching point position, which has resulted in both improved photovoltaic efficiency and charge carrier mobility in field-effect transistors. [18][19][20] However, the preferred side-chain is largely dependent on the exact polymer system. Our approach herein is to conduct a systematic study of the alkyl side-chain branching point position, investigating the effects of overall steric bulk on solid-state properties in a promising class of semiconducting polymers.…”
Section: Introductionmentioning
confidence: 99%