Critical interface: Poly-silicon to tunneling SiO2 for passivated contact performance

Nemeth, Bill; Harvey, Stephen; Young, David L.; Page, Matthew; Salvia, Vincenzo La; Findley, Dawn; Kale, Abhijit S.; Theingi, San; Stradins, Paul

doi:10.1063/1.5123857

15th International Conference on Concentrator Photovoltaic Systems (CPV-15) 2019

DOI: 10.1063/1.5123857

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Critical interface: Poly-silicon to tunneling SiO2 for passivated contact performance

Bill Nemeth

Stephen Harvey

David L. Young

et al.

Abstract: This report is available at no cost from the National Renewable Energy Laboratory (NREL) at www.nrel.gov/publications. U.S. Department of Energy (DOE) reports produced after 1991 and a growing number of pre-1991 documents are available free via www.OSTI.gov.

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Improved V₂O_X Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO_X Tunnel Layer

Yang

et al. 2021

Adv Materials Inter

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passivating contacts have achieved a PCE up to 25.11%. [2] However, the a-Si:H involves capital intensive deposition process and toxic gas precursors, [3] and its relatively high parasitic absorption limits further improvements in device performance. [4,5] To address the above issues with lower parasitic absorption and process cost, alternative carrier-selective contacts based on wide bandgap transition metal oxides (TMOs) have triggered extensive research interest in the photovoltaic community. [6] TMOs featuring high work functions (Φ >5.5 eV) such as MoO X , [7][8][9] V 2 O X , [10][11][12] and WO X [13] are capable of inducing either an inversion layer on n-type silicon (n-Si) or an accumulation layer of holes on p-type silicon (p-Si), thus rendering selective hole extraction. [7,14] The c-Si solar cell with a full-area MoO X contact is one of the most successful examples, which has obtained a record PCE of 23.5%. [15] Compared with MoO X , V 2 O X , with properly tuned oxygen vacancies, has a higher work function and can induce a greater upward band bending on the c-Si surface, resulting in a superior fieldeffect passivation quality. [14,16] The highest PCE of n-Si cells with V 2 O X hole transport layer (HTL) is 21.6% up to now. [12] Inmetal oxide (TMO) thin films featuring tunable work function, high transmittance, and simple fabrication process are expected to serve as carrier-selective transport layers for high-efficiency crystalline silicon (c-Si) solar cells. TMOs are prone to reaction or elemental migration with adjacent materials, which leads to uncontrollable optical and electrical properties. In this work, V 2 O X passivating contact, a promising hole transport layer (HTL) thanks to its high work function, is investigated and implemented in p-type c-Si solar cells. An ultrathin SiO X tunnel layer is intentionally introduced by UV/O 3 pretreatment to suppress the redox reaction at c-Si/V 2 O X interface. Both saturation current density and contact resistance are reduced with the presence of UV-SiO X due to the well tunned oxygen vacancies in SiO X and V 2 O X thin films. The power conversion efficiency (PCE) based on p-Si/UV-SiO X /V 2 O X /Ag rear contact achieves 21.01% with an increased open-circuit voltage of 635 mV and fill factor (FF) of 83.25%.

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Improved V₂O_X Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO_X Tunnel Layer

Yang

et al. 2021

Adv Materials Inter

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Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications

Yan

Suhaimi

Xu³

et al. 2020

Solar Energy Materials and Solar Cells

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Critical interface: Poly-silicon to tunneling SiO2 for passivated contact performance

Abstract: This report is available at no cost from the National Renewable Energy Laboratory (NREL) at www.nrel.gov/publications. U.S. Department of Energy (DOE) reports produced after 1991 and a growing number of pre-1991 documents are available free via www.OSTI.gov.

Cited by 2 publications

References 10 publications

Improved V₂O_X Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO_X Tunnel Layer

Improved V₂O_X Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO_X Tunnel Layer

Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications

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Critical interface: Poly-silicon to tunneling SiO2 for passivated contact performance

Abstract: This report is available at no cost from the National Renewable Energy Laboratory (NREL) at www.nrel.gov/publications. U.S. Department of Energy (DOE) reports produced after 1991 and a growing number of pre-1991 documents are available free via www.OSTI.gov.

Cited by 2 publications

References 10 publications

Improved V2OX Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiOX Tunnel Layer

Improved V2OX Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiOX Tunnel Layer

Development of ultra-thin doped poly-Si via LPCVD and ex-situ tube diffusion for passivated contact solar cell applications

Contact Info

Product

Resources

About

Improved V₂O_X Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO_X Tunnel Layer

Improved V₂O_X Passivating Contact for p‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO_X Tunnel Layer