High quality, c-axis oriented thin films of semiconducting La2CuO4 have been fabricated
by pulsed laser-ablation deposition. Superconducting properties have been successfully
induced in the films by a postdeposition, ex-situ static annealing process in a F2/N2 gas
mixture. The influence of the fluorination temperature on the structural, magnetic, and
electronic properties of the resulting thin films has been examined in detail. X-ray data
reveal that facile fluorination of the films proceeds via a complex, multistage process, often
yielding two distinct La2CuO4-type phases. This phase segregation suggests a disproportionation process following fluorine uptake. Such a disproportionation is subtly different
from that found for oxygen excess La2CuO4 in that for La2CuO4+
δ the parent O4 and an
oxygen rich (O4+
δ) phase are formed, but in the present system two fluorinated (i.e., oxidized)
phases are formed. La2CuO4 thin films fluorinated at a temperature of 150 °C possess the
highest values for both T
c (onset) (ca. 38.5 K) and critical current density (>106 A cm-2 at
4.2 K in zero magnetic field). Magnetic susceptibility data demonstrate that this fluorination
methodology is of sufficient sensitivity to allow the controlled hole-doping of semiconducting
La2CuO4 thin films through to the high-temperature superconducting regime.