Critical behaviour of the conductivity in metallic n-type InP close to the metal-insulator transition

Biskupski, G.; kaaouachi, A. El; Briggs, A.

doi:10.1088/0953-8984/3/43/008

Cited by 19 publications

(17 citation statements)

References 16 publications

(4 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have noted that when the magnetic field B < 9 T, the slope corresponds to 1,6 ( ( 0) L in this region. In fact, Biskupski et al [1] showed that when the MIT approached the relevant length is T L and in the critical region the electrical conductivity has a 1/ 3…”

Section: Resultsmentioning

confidence: 82%

“…In fact, Biskupski et al [1] showed that when the MIT approached the relevant length is T L and in the critical region the electrical conductivity has a 1/ 3…”

Section: Resultsmentioning

confidence: 99%

“…Biskupski et al [1] have observed the metal-insulator transition (MIT) induced by a magnetic field in barely metallic and compensated n-type InP. Using new analysis methods, they determined the critical magnetic field B c for which the conductivity changes from a metallic behaviour to a variable rangehopping regime.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT^1/2”of the metallic electrical conductivity in n‐type InP

kaaouachi¹,

Nafidi

Biskupski

2003

Physica Status Solidi (b)

View full text Add to dashboard Cite

We present measurements of the electrical conductivity of barely metallic n-type indium phosphide (InP) that are driven to the metal-insulator transition (MIT) by a magnetic field. The experiments are carried out at low temperature in the range 4.2-0.066 K and in magnetic fields up to 11 T. The analysis of the lowtemperature correction to the Boltzmann conductivity due to electron-electron interaction as a function of the magnetic field allowed us to study the influence of exchange and Hartree interactions on the change of the sign of the electron-electron interaction correction. When the magnetic field is increased, several phenomena contribute to this corrective term "mT 1/2 " among which are the spin-splitting effect, the electronelectron interaction effect, and weak localisation effect. Not too close to the MIT, both the inelastic diffusion length L I and the interaction length L T contribute to a T 1/2 corrective term of the metallic electrical conductivity σ . It is convenient to develop a criterion to distinguish their contribution. This is based on the relation between the magnitude m and the zero temperature ( 0) T σ = .

show abstract

Section: Resultsmentioning

confidence: 82%

“…In fact, Biskupski et al [1] showed that when the MIT approached the relevant length is T L and in the critical region the electrical conductivity has a 1/ 3…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT^1/2”of the metallic electrical conductivity in n‐type InP

kaaouachi¹,

Nafidi

Biskupski

2003

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Biskupski et al 1 , and El kaaouachi et al 2 have observed the metal-insulator transition (MIT) induced by a impurity concentration in barely metallic and compensated n-type InP. Using new analysis methods, they determined the critical magnetic field C B for which the conductivity changes from a metallic behaviour to a variable range hopping regime.…”

Section: Introductionmentioning

confidence: 99%

Study of electrical conductivity and scale theory in metallic n-type GeSb

Sybous¹,

kaaouachi

Narjis

et al. 2012

SPIE Proceedings

View full text Add to dashboard Cite

We present measurements of the electrical conductivity of barely metallic n-type GeSb that are driven to the metal-insulator transition (MIT) by impurity concentration. The experiments were carried out at low temperature in the range (4.2 -0.066 K) and with impurity concentrations up 3 17 410 . 6 − cm . On the metallic side of the MIT, the electrical conductivity is found to behave like 2 / 1 0 mT + = σ σ down to 66 mK. Physicalexplanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between two effects involved in the mechanisms of conduction, like electron-electron interaction effect, and weak localization effect.

show abstract

“…Magnetic field induced localization is often observed as a change from a non-activated to an activated conductivity in semiconduction which are degenerate at low temperatures at zero magnetic field [1]. In a typical experimental procedure much care is taken to maintain a sample as close to the thermodynamic equilibrium as possible.…”

Section: Introductionmentioning

confidence: 99%

Non-Activated Conductivity of Hot Electrons in Localization Regime

Łuskowski

Grynberg

1995

Acta Phys. Pol. A

View full text Add to dashboard Cite

Temperature (Τ) dependence of conductivity (σ) was studied in semi--insulating GaAs as a function of the magnetic field (B) for 1.8 K< Τ < 40 K for high electric fields. An infrared illumination of a sample and application of an electric field caused a non-equilibrium distribution of electrons in the conduction band. An increase in B caused a localization transition which manifested itself by a gradual disappearance of the impact ionization of shallow bound states. The transition was connected with a change from a non-activated to an activated conductivity only if Τ > 4 K, otherwise σ showed only a non-activated character. It is proposed that for Τ < 4 K the electron distribution function is mostly determined by optical and electric field excitations, which results in a non-activated conductivity. For T> 4 K thermal excitations become dominant which leads to an activated character of σ.

show abstract

Critical behaviour of the conductivity in metallic n-type InP close to the metal-insulator transition

Cited by 19 publications

References 16 publications

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT^1/2”of the metallic electrical conductivity in n‐type InP

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT^1/2”of the metallic electrical conductivity in n‐type InP

Study of electrical conductivity and scale theory in metallic n-type GeSb

Non-Activated Conductivity of Hot Electrons in Localization Regime

Contact Info

Product

Resources

About

Critical behaviour of the conductivity in metallic n-type InP close to the metal-insulator transition

Cited by 19 publications

References 16 publications

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT1/2”of the metallic electrical conductivity in n‐type InP

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT1/2”of the metallic electrical conductivity in n‐type InP

Study of electrical conductivity and scale theory in metallic n-type GeSb

Non-Activated Conductivity of Hot Electrons in Localization Regime

Contact Info

Product

Resources

About

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT^1/2”of the metallic electrical conductivity in n‐type InP

Analysis of the behaviour of magnitude m with magnetic field in corrective term “mT^1/2”of the metallic electrical conductivity in n‐type InP