Cristallisation du silicium amorphe par laser à excimères

Pribat, Didier; Legagneux, Pierre; Plais, F.; Petinot, F.; Huet, O.; Reita, C.

doi:10.1051/anphys/1997042

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…Once the whole layer is melted, a solidification front is formed and progresses from the bottom of the layer up to the top, leaving a microcrystalline structure behind. Depending on the irradiation conditions (mainly the energy density), the size of the so‐called Si grains currently range from a few tens of nm up to 1 µm 53–55. The performance of the TFT is directly related to this size.…”

Section: Display Technologymentioning

confidence: 99%

Organic light‐emitting diode (OLED) technology: materials, devices and display technologies

Geffroy

Roy

Prat

2006

Polymer International

878

539

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Since the breakthrough by Kodak in 1987, organic light-emitting diodes (OLEDs) have been seen as one of the most promising technologies for future displays. A number of materials have been developed and improved in order to fulfil the requirements of this application. The materials differ from one another by their structure but also by the mechanism involved in the electroluminescence produced (fluorescence versus phosphorescence). When properly stacked, these materials result in a device that can achieve the required high efficiency and long lifetime. Such red, green and blue devices can then be combined in matrices to become the core of a display. Building up these structures onto a display backplane is one of the challenges facing the industry. The circuitry for driving the pixels can be adapted to the OLED, sometimes at the expense of the simplicity of the display, but bearing in mind that the fabrication process must remain industrially viable.

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Section: Display Technologymentioning

confidence: 99%

Organic light‐emitting diode (OLED) technology: materials, devices and display technologies

Geffroy

Roy

Prat

2006

Polymer International

878

539

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show abstract

“…Durant cette phase, l'impulsion laser n'étant pas terminée, l'énergie laser continue à s'accumuler en surface entretenant un nouveau front de fusion qui se déplace à la vitesse de 4 à 6 mis. Lors de la solidification, les microcristaux précédemment crées servent de germes à la formation de nouveaux grains dont la taille croît avec la densité d'énergie (et l'épaisseur de silicium fondu) [3,4,5]. régime de'Super Lateral Growth' (SLG).…”

Section: Technologies Laser Disponiblesunclassified

Des lasers à excimères pour cristalliser le silicium des écrans plats : pourquoi ? comment ?

Prat

2003

J. Phys. IV France

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Cristallisation du silicium amorphe par laser à excimères

Cited by 2 publications

References 14 publications

Organic light‐emitting diode (OLED) technology: materials, devices and display technologies

Organic light‐emitting diode (OLED) technology: materials, devices and display technologies

Des lasers à excimères pour cristalliser le silicium des écrans plats : pourquoi ? comment ?

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