1975
DOI: 10.1007/bf00540828
|View full text |Cite
|
Sign up to set email alerts
|

Creep of hot-pressed silicon nitride

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

3
6
0

Year Published

1981
1981
2022
2022

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 45 publications
(9 citation statements)
references
References 7 publications
3
6
0
Order By: Relevance
“…In the present study, a stress exponent of 2.0 was determined for Si3N4-6Y203~2Al203 in agreement with data for SiAlON and silicon nitrides [17][18][19][29][30][31][33][34][35][36][37][38][39][40][41][42]. This apparent discrepancy has been reconciled by Evans and Rana [43], who developed statistical models The activation energy determined from the Arrhenius plot of strain rate 9 against reciprocal temperature in Fig.…”
Section: Stress Exponentsupporting
confidence: 82%
See 1 more Smart Citation
“…In the present study, a stress exponent of 2.0 was determined for Si3N4-6Y203~2Al203 in agreement with data for SiAlON and silicon nitrides [17][18][19][29][30][31][33][34][35][36][37][38][39][40][41][42]. This apparent discrepancy has been reconciled by Evans and Rana [43], who developed statistical models The activation energy determined from the Arrhenius plot of strain rate 9 against reciprocal temperature in Fig.…”
Section: Stress Exponentsupporting
confidence: 82%
“…The creep properties of dense silicon nitride, which are mainly controlled by grain boundary sliding along the amorphous phase, can be improved by: (1) increasing the viscosity of the grain boundary phase; (2) crystallization of the grain boundary phase; and (3) production of high aspect ratio beta-Si3N4 grains, favored by high viscosity melts [1, [16][17][18][19]. Hence, additives such as Y203, which give a higher viscosity grain boundary phase, generally result in lower creep rates than for MgO-doped silicon nitride [20].…”
mentioning
confidence: 99%
“…The bending creep of monolithic silicon nitride with a Y 2 O 3 additive and of the corresponding nanocomposites has been studied by several authors. The values of stress exponent varied from 1 to 3.1 19,23,27–29 27 found stress exponents of a nanocomposite with 5 wt% Y 2 O 3 +20 wt% SiNC, in the range from 0.7 to 1.4 at temperatures in the range 1200°–1400°C prepared by a processing route similar to this study.…”
Section: Discussionsupporting
confidence: 62%
“…The values of stress exponent varied from 1 to 3.1. 19,23,[27][28][29] Sˇajgalı´k et al 27 found stress exponents of a nanocomposite with 5 wt% Y 2 O 3 120 wt% SiNC, in the range from 0.7 to 1.4 at temperatures in the range 12001-14001C prepared by a processing route similar to this study. These values agree with the results of the present measurements.…”
Section: Discussionsupporting
confidence: 58%
“…Even when dislocations are observed, 22 there appears to be no difference in dislocation structure between the as-received and the deformed material. Only rarely do researchers note a change in dislocation density 61,62 after creep. Fig.…”
Section: (2) Experimental Observationsmentioning
confidence: 99%