Creep behavior of a carbon-derived Si3N4/SiC nanocomposite

Dusza, Ján; Kovalčík, Jaroslav; Hvizdoš, Pavol; Šajgalı́k, Pavol; Hnatko, Miroslav; Reece, Mike

doi:10.1016/j.jeurceramsoc.2003.10.046

Cited by 29 publications

(15 citation statements)

References 29 publications

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“…It can be concluded that the highest creep resistance of nanocomposite containing Lu 2 O 3 is attributed to the positive effect of intergranularly located SiC particles as well as to the intergranular phase with a beneficial chemical composition and hence with the small viscosity coefficient.Taking the values of the stress exponents into account we can conclude that the creep mechanisms in all studied th terials are probably diffusion through the intergranular phase connected with the solution/precipitation and grain boundary sliding. The similar results were presented by Dusza et al[10] for creep behavior of carbon derived Si 3 N 4 /SiC nanocomposite with Y 2 O 3 sintering additive. ] H. Park, H. W. Kim, H. E. Kim, "Oxidation and Strength Retention of Monolithic Si 3 N 4 and Nanocomposite Si 3 N 4 -SiC with Yb 2 O 3 as a Sinte oxide additives (La 2 O 3 , Y 2 O 3 , Yb 2 O 3 and Lu 2 O 3 ) have been investigated.…”

supporting

confidence: 86%

“…Park et al [9] reported that nanocomposite Si 3 N 4 /SiC with Yb 2 O 3 additive showed better oxidation resistance and higher strength retention than the monolithic Si 3 N 4 with Yb 2 O 3 . Significantly higher creep resistance of the Si 3 N 4 /SiC nanocomposite in comparison with monolithic Si 3 N 4 was observed by Dusza et al [10].…”

Section: Introductionmentioning

confidence: 70%

“…SiC particles located on the grain boundary of Si 3 N 4 hinder the grain boundary sliding and hence improve the creep resistance. Another reason for the improved creep resistance is that SiC particles change the shape and chemistry of the grain boundaries and grain boundary phases [10].…”

Section: E Creep Behaviormentioning

confidence: 99%

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Microstructure and Mechanical Properties of Rare-Earth Doped Si3N4/SiC Nanocomposites

Tatarko¹,

Dusza²,

Lojanová³

et al. 2009

2009 Fifth International Conference on MEMS NANO, and Smart Systems

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Influence of various rare-earth oxide sintering additives () on the microstructure and mechanical properties of hot-pressed Si 3 N 4 /SiC nanocomposites have been investigated. Fracture toughness of investigated materials slightly decreased with increasing ionic radius of rare-earth element (RE). Aspect ratio of the Si 3 N 4 grains increased with decreasing ionic radius of rare-earth both in the studied Si 3 N 4 /SiC nanocomposites. Materials with higher aspect ratio of the Si 3 N 4 grains exhibited crack deflection more frequently compared to the Si 3 N 4 doped with lower aspect ratio, which was responsible for the higher fracture toughness. Flexural strength of the investigated materials increased with decreasing ionic radius of rare-earth elements. Significantly improved creep resistance was observed in case of nancomposite materials with smaller ionic radius of RE 3+ .

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supporting

confidence: 86%

Section: Introductionmentioning

confidence: 70%

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Microstructure and Mechanical Properties of Rare-Earth Doped Si3N4/SiC Nanocomposites

Tatarko¹,

Dusza²,

Lojanová³

et al. 2009

2009 Fifth International Conference on MEMS NANO, and Smart Systems

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“…18), indicating that the diffusion is the main creep mechanism. 9,10 Also in the case of high-temperature deformation of micro/nano-composites the intra/inter-SiC nano-inclusions distribution is a dominant for their behaviour. It was supposed and by Figs.…”

Section: Creep Resistancementioning

confidence: 99%

“…Their presence at grain boundaries hinders the deformation of the composite at the elevated temperatures by the grain-boundary sliding. [8][9][10] Therefore both, incorporation of SiC nano-inclusion to the Si 3 N 4 matrix and design of the grain-boundary phase composition can be an effective tool for the tailored room-as well as high-temperature behaviour of Si 3 N 4 based ceramic composites.…”

Section: Introductionmentioning

confidence: 99%