Creation and mobility of self-interstitials in diamond by use of a transmission electron microscope and their subsequent study by photoluminescence microscopy

Symmetry considerations are used in presenting a model of the electronic structure and the associated dynamics of the nitrogen-vacancy center in diamond. The model accounts for the occurrence of optically induced spin polarization, for the change of emission level with spin polarization and for new measurements of transient emission. The rate constants given are in variance to those reported previously.

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“…Electron irradiation with energies greater than 200 keV creates vacancies [14]. The vacancies are mobile at 800…”

Section: Nitrogen-vacancy Centermentioning

confidence: 99%

Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics

2006

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“…Its local mode peak splits into three lines in diamond grown with equal amount of 12 C and 13 C, which suggests a simple structure with one carbon atom involved [5]. TR12 has the same symmetry and a ZPL at 2.638 eV [3].…”

Section: Introductionmentioning

confidence: 95%

Optical Study of Some Interstitial-Related Centres in CVD Diamond

Iakoubovskii

Adriaenssens

2000

phys. stat. sol. (a)

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Luminescence and optical transmittance measurements were performed on irradiated natural diamond crystals and on synthetic films. Their results show that variations in luminescence with annealing can be due to changes in the non-radiative processes rather than in the concentration of the investigated centre. In particular, emission from the interstitial-related 3H centre increases when the neutral vacancy (GR1) anneals out, showing that the GR1 can effectively quench 3H emission. The 3H centre was found to be stable up to 900 C in irradiated CVD and natural diamond. As-grown CVD films also show the presence of this centre as well as of a defect, which is assigned to the distorted TR12 centre. The latter defect, labeled as TR12 0 , shows remarkable temperature stability, being present in films grown at 2100 C.

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“…However, it seems that up to now there is no final agreement on the origin of the defect. Steeds et al [3,4] argued that the 3H luminescence line arises from the single, isolated h100i split selfinterstitial atoms in the diamond lattice. Davies [5] connected self-interstitial defects with R2 centres, observed in electron spin resonance spectra, and the two optical absorption centres at 1.685 and 1.859 eV, which correlate in strength with the R2 one.…”

Section: Introductionmentioning

confidence: 99%

UV and Anti-Stokes Photoluminescence of 3H Centre in Electron-Irradiated CVD Diamond

Власов¹,

Ralchenko²,

Konov³

2001

phys. stat. sol. (a)

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Photoluminescence (PL) of the 3H centre was studied at different excitation energies for 8 MeV electron-irradiated CVD diamond at temperatures 90-290 K. A frequency up-conversion effect was observed at 2.41 eV excitation of the 3H centre luminescence (2.462 eV). A deviation of the temperature dependence of the anti-Stokes PL intensity from the Boltzmann distribution was noted at 90-130 K. A transformation of the 2.462 eV (503.5 nm) line into the 2.443 eV (507.6 nm) line in the PL spectra was observed for the first few minutes of laser pumping at an excitation photon energy of 3.82 eV.

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Creation and mobility of self-interstitials in diamond by use of a transmission electron microscope and their subsequent study by photoluminescence microscopy

Cited by 53 publications

References 15 publications

Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics

Nitrogen-vacancy center in diamond: Model of the electronic structure and associated dynamics

Optical Study of Some Interstitial-Related Centres in CVD Diamond

UV and Anti-Stokes Photoluminescence of 3H Centre in Electron-Irradiated CVD Diamond

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