Creating Graphene p–n Junctions Using Self-Assembled Monolayers

Abstract

3-Aminopropyltriethoxysilane (APTES) and perfluorooctyltriethoxysilane (PFES) were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively. A graphene p-n junction was obtained by patterning both modifiers on the same dielectric and verified through the creation of a field effect transistor (FET). Characteristic I-V curves indicate the presence of two separate Dirac points which confirms an energy separation of neutrality points within the complementary regions. This method minimizes doping-induced defects and results in thermally stable graphene p-n junctions for temperatures up to 200 °C.

Formation of Air Stable Graphene p–n–p Junctions Using an Amine‐Containing Polymer Coating

“…where L ch = 2 mm, W ch = 50 µm, V d = 0.1 V, and C ox = 115 aF µm -2 , [ 19,59 ] and g m = d I d /d V gs (peak g m value from the linear regime of the I d -V gs curve was used for calculating the mobilities). This is in contrast with other methods to form graphene junctions such as those using electrical stressing.…”

The enhanced photoactivity of hydrogenated TiO2@reduced graphene oxide with p–n junctions

“…5,6 It is well known that controlled oxidation of graphene (or partial reduction of graphene oxide (GO)) can modify the electronic band structure of graphene, open up an energy gap between the valence bands and the conduction bands and therefore transform the semiconductor behaviour type to either p-type or ntype. [7][8][9] Furthermore, the value of the energy gap has a correlation with the reduction degree of GO. 10,11 Therefore, GO with different reduction degrees would give rise to a diverse energy gap and semiconductor behaviour type, resulting in different chemical properties of GO.…”

Self-powered graphene thermistor

“…Realizing nanoscale graphene leads to bandgap opening [2], along with the good transport properties of high carrier mobility and high Fermi velocity, enabling the promising prospects of graphene for high performance electronic devices and futuristic devices [3,4]. Various methods have also been attempted to create semiconducting graphene with p and n type behaviour such as the use of multiple electrostatic gates [5], electrical stress-induced doping [6,7], chemical treatment by gas exposure [8], chemical modifications on the graphene [9][10][11], changing the local electrostatic potential in the vicinity of one of the contacts [12] and self-assembled monolayers [13].…”