Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Hossain, Tasnia; Rashid, Mohammad Junaebur; Frayssinet, Éric; Baron, N.; Damilano, B.; Sèmond, F.; Wang, J.; Durand, Lise; Ponchet, Anne; Demangeot, F.; Cordier, Y.

doi:10.1002/pssb.201700399

Cited by 4 publications

(3 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Die Attachmentioning

confidence: 99%

“…Therefore, further research based on statistics in subsequent studies was conducted. [ 141 ] The results (Figure 20e) revealed that the percentage of fractured mesas increased with mesa size, with in‐plane stress nearing 1.8 GPa for mesas larger than 100 µm (Figure 20f). Variations in in‐plane stress for 400 µm mesas were linked to differences in the growth at film edges or depths.…”

Section: Application Of Raman Characterization and Modeling In Microe...mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

View full text Add to dashboard Cite

In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology.

show abstract

Section: Die Attachmentioning

confidence: 99%

Section: Application Of Raman Characterization and Modeling In Microe...mentioning

confidence: 99%

See 1 more Smart Citation

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

Long range, non-destructive characterization of GaN substrates for power devices

Gallagher

Anderson

Luna

et al. 2019

Journal of Crystal Growth

View full text Add to dashboard Cite

Cracking effects in squashable and stretchable thin metal films on PDMS for flexible microsystems and electronics

Baëtens¹,

Pallecchi²,

Thomy³

et al. 2018

Sci Rep

View full text Add to dashboard Cite

Here, we study cracking of nanometre and sub-nanometre-thick metal lines (titanium, nickel, chromium, and gold) evaporated onto commercial polydimethylsiloxane (PDMS) substrates. Mechanical and electromechanical testing reveals potentially technologically useful effects by harnessing cracking. When the thin film metal lines are subjected to uniaxial longitudinal stretching, strain-induced cracks develop in the film. The regularity of the cracking is seen to depend on the applied longitudinal strain and film thickness—the findings suggest ordering and the possibility of creating metal mesas on flexible substrates without the necessity of lithography and etching. When the metal lines are aligned transversally to the direction of the applied strain, a Poisson effect-induced electrical ‘self-healing’ can be observed in the films. The Poisson effect causes process-induced cracks to short circuit, resulting in the lines being electrically conducting up to very high strains (~40%). Finally, cracking results in the observation of an enhanced transversal gauge factor which is ~50 times larger than the geometric gauge factor for continuous metal films—suggesting the possibility of high-sensitivity thin-film metal strain gauge flexible technology working up to high strains.

show abstract

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

Cited by 4 publications

References 29 publications

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Long range, non-destructive characterization of GaN substrates for power devices

Cracking effects in squashable and stretchable thin metal films on PDMS for flexible microsystems and electronics

Contact Info

Product

Resources

About