Abstract:We investigate the crack-healing mechanism of 4H silicon carbide (4H-SiC) and reveal the effect of dopants on the crack-healing behavior of 4H-SiC. Vickers indentation tests and thermal annealing are utilized to generate cracks and heal cracks in 4H-SiC, respectively. High-temperature thermal annealing in the air atmosphere is found to be capable of effectively healing indentation-induced cracks and releasing indentation-induced stress in undoped 4H-SiC by the formation and viscous flow of glass phase SiO2. Ni… Show more
“…These peaks can be used to characterize the crystalline quality, internal stresses, phase transitions, and other related properties of 4H-SiC. 8 Fig. 2(c) presents the Raman spectra of the defect and non-defect regions of 4H-SiC in the initial growth stage.…”
This paper focuses on the generation and transformation of defects associated with subsurface damages (SSDs) in seed crystals during the physical vapor transport (PVT) growth of 4H-SiC crystals. SSDs in...
“…These peaks can be used to characterize the crystalline quality, internal stresses, phase transitions, and other related properties of 4H-SiC. 8 Fig. 2(c) presents the Raman spectra of the defect and non-defect regions of 4H-SiC in the initial growth stage.…”
This paper focuses on the generation and transformation of defects associated with subsurface damages (SSDs) in seed crystals during the physical vapor transport (PVT) growth of 4H-SiC crystals. SSDs in...
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