Cr3+:SrGa12O19: A Broadband Near‐Infrared Long‐Persistent Phosphor

Xu, Jü; Chen, Daqin; Yu, Yunlong; Zhu, Wenjuan; Zhou, Ji‐Xun; Wang, Yuansheng

doi:10.1002/asia.201400009

Cited by 76 publications

(32 citation statements)

References 36 publications

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“…This means each 10% of MgO and ZrO 2 can be added. One can assume that the highly versatile coordinations [4][5][6] of Ga 3+ in the hexaferrite structure support the partial replacement of this ion by the Mg 2+ /Zr 4+ dopant. Besides, the high number of four components leads at liquidus temperatures around 1500 °C to a significant entropic stabilization of the (Mg, Zr):SrGa 12 O 19 mixture phase.…”

Section: Resultsmentioning

confidence: 99%

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Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

Klimm

Szczefanowicz

Wolff

et al. 2021

J Therm Anal Calorim

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By differential thermal analysis, a concentration field suitable for the growth of Zr, Mg co-doped strontium hexagallate crystals was observed that corresponds well with known experimental results. It was shown that the melting point of doped crystal is ca. 60 K higher than that of undoped crystals. This higher melting points indicate hexagallate phase stabilization by Zr, Mg co-doping and increase the growth window of (Mg,Zr):SrGa12O19, compared to undoped SrGa12O19 that grows from SrO–Ga2O3 melts.

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Section: Resultsmentioning

confidence: 99%

“…Moreover, the chemical versatility of the magnetoplumbite structure allows doping of SrGa 12 O 19 with luminescent ions such as Mn 2+ and Cr 3+ [4,5].…”

Section: Introductionmentioning

confidence: 99%

Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

Klimm

Szczefanowicz

Wolff

et al. 2021

J Therm Anal Calorim

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“…Chen method dealt with TL glow curve with general order kinetics and looked more closely at the shape of the TL peak. The trap depth can be estimated by Equations (3)–(6)

E = \frac{c_{τ} k T_{m}^{2}}{τ} - b_{τ} false(2 k T_{m} false)

c_{r} = 1.51 + 3.0 false(μ - 0.42 false)

b_{τ} = 1.58 = 4.2 false(μ - 0.42 false)

μ = \frac{T_{2} - T_{m}}{T_{m} - T_{1}}

where E represents the activation energy for trap depth; k the Boltzmann constant; µ the numerical factors which depend on the shape of TL curves; τ the low temperature half width ( T m ‐ T 1 ); T 1 , T m , and T 2 are the temperature of half intensity at low‐temperature side, the peak temperature, and the temperature of half intensity at high‐temperature side, respectively.…”

Section: Resultsmentioning

confidence: 99%

A Photostimulated BaSi₂O₅:Eu²⁺,Nd³⁺ Phosphor‐in‐Glass for Erasable‐Rewritable Optical Storage Medium

Lin

Huang

et al. 2019

Laser & Photonics Reviews

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Up‐to‐date optical storage technology calls for large memory capacity, expanded storage dimension, rewritable capability, low cost, and high energy efficiency, which poses stringent requirements on the storage medium. In this study, a novel BaSi2O5:Eu2+,Nd3+ photostimulated luminescence (PSL) phosphor is developed and then made into phosphor‐in‐glass (PiG) storage medium. Upon ultraviolet light irradiation (write‐in), the generated electrons are captured by the traps, which can be further released by thermal or near‐infrared laser stimulation (read‐out). An insightful investigation is carried out to establish the relationship between trap properties and PSL performance. Demonstration application confirmed the intensity‐multiplexing optical information (including the designed bar code, quick response (QR) code, graphic patterns, and binary data) encoding/decoding. Remarkably, BaSi2O5:Eu2+,Nd3+ PSL PiG show excellent erasable‐rewritable capability thanking to the admirable anti‐ultraviolet property in glass host, as well as good optical data retention ability owing to the spatially isolated deep traps. Hopefully, the present work can push forward the research progress of PSL material and its practical application in optical storage.

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“…reported a super‐long NIR LAG Zn 3 Ga 2 Ge 2 O 10 :Cr 3+ phosphor. Subsequently, the NIR LAG properties of many other Cr 3+ ‐activated gallate phosphors, such as La 3 Ga 5 GeO 14 :Cr 3+ , LiGa 5 O 8 :Cr 3+ , Ga 2 O 3 :Cr 3+ , Zn 3 Ga 2 SnO 8 :Cr 3+ , MgGa 2 O 4 :Cr 3+ , Ca 3 Ga 2 Ge 3 O 12 :Cr 3+ , SrGa 12 O 19 :Cr 3+ , and Gd 3 Ga 5 O 12 :Cr 3+ phosphors, were investigated owing to the excellent NIR LAG performance of Cr 3+ ions to substitute for Ga 3+ at the octahedral sites . Up to now, most of the host materials as described above belong to Cr 3+ ions to substitute for Ga 3+ sites with octahedral coordination.…”

Section: Introductionmentioning

confidence: 99%

Cr³⁺‐activated Li₅Zn₈Al₅Ge₉O₃₆: A near‐infrared long‐afterglow phosphor

Xue

Fan

et al. 2017

J Am Ceram Soc

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Near-infrared long-afterglow (LAG) materials have attracted considerable attention owing to their high potential for in vivo imaging applications. Here, we present a series of near-infrared LAG phosphors Li 5 Zn 8 Al 5Àx Ge 9 O 36 :xCr 3+ (LZAG:Cr 3+ ), which were synthesized using a solid-state reaction method. The pure LZAG host exhibits blue photoluminescence and LAG emission. We investigated the effect of the zinc vacancy contents on the photoluminescence and LAG performance by adjusting the zinc content and introducing Ga 3+ ions to substitute the Zn 2+ sites in LZAG host. When Cr 3+ ions were introduced into the LZAG host, LZAG:Cr 3+ produced a strong, broad blue emission band centered at 456 nm and a near-infrared emission band at 700 nm caused by the 2 E ? 4 A 2 transition of Cr 3+ . The energy transfer processes from the LZAG host to Cr 3+ were identified in the photoluminescence and LAG process. After irradiation at 258 nm for 10 minutes, the LAG emission of LZAG:0.008Cr 3+ can last nearly 2.5 hours. Moreover, the LAG intensity and duration of LZAG: 0.008Cr 3+ were significantly improved by introducing a small dose of Ga 3+ ions. Finally, the traps and mechanism of LAG in LZAG, LZAG:Ga 3+ , and LZAG:Cr 3+ were discussed in detail. K E Y W O R D Sluminescence, phosphors, vacancies

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Cr³⁺:SrGa₁₂O₁₉: A Broadband Near‐Infrared Long‐Persistent Phosphor

Cited by 76 publications

References 36 publications

Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

A Photostimulated BaSi₂O₅:Eu²⁺,Nd³⁺ Phosphor‐in‐Glass for Erasable‐Rewritable Optical Storage Medium

Cr³⁺‐activated Li₅Zn₈Al₅Ge₉O₃₆: A near‐infrared long‐afterglow phosphor

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Cr3+:SrGa12O19: A Broadband Near‐Infrared Long‐Persistent Phosphor

Cited by 76 publications

References 36 publications

Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

Phase diagram studies for the growth of (Mg,Zr):SrGa12O19 crystals

A Photostimulated BaSi2O5:Eu2+,Nd3+ Phosphor‐in‐Glass for Erasable‐Rewritable Optical Storage Medium

Cr3+‐activated Li5Zn8Al5Ge9O36: A near‐infrared long‐afterglow phosphor

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Product

Resources

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Cr³⁺:SrGa₁₂O₁₉: A Broadband Near‐Infrared Long‐Persistent Phosphor

A Photostimulated BaSi₂O₅:Eu²⁺,Nd³⁺ Phosphor‐in‐Glass for Erasable‐Rewritable Optical Storage Medium

Cr³⁺‐activated Li₅Zn₈Al₅Ge₉O₃₆: A near‐infrared long‐afterglow phosphor