2021
DOI: 10.1116/6.0000922
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Cr and CrOx etching using SF6 and O2 plasma

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Cited by 6 publications
(2 citation statements)
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“…Notably, the Silicon nanograss is not obvious prior to 4 min; however, the etching depth can be measured up to 20 min. Although chromium is a high selectivity etching mask, SF 6 −O 2 plasma enables adjustable etching rates for chromium, 36 and a 50 nm-thick chromium mask is etched away beyond 20 min.…”
Section: Structural Evolutionmentioning
confidence: 99%
“…Notably, the Silicon nanograss is not obvious prior to 4 min; however, the etching depth can be measured up to 20 min. Although chromium is a high selectivity etching mask, SF 6 −O 2 plasma enables adjustable etching rates for chromium, 36 and a 50 nm-thick chromium mask is etched away beyond 20 min.…”
Section: Structural Evolutionmentioning
confidence: 99%
“…The suspended structures are fabricated in a silicon-oninsulator substrate (see Supplemental Material [30] with Refs. [36][37][38]). The resulting devices are optically characterized with a tapered fiber loop placed in contact along the waveguide axis, allowing light to evanescently couple into resonant optical modes of the structure [31].…”
mentioning
confidence: 99%