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Shoji, Yasushi; Oshima, Ryuji; Makita, Kikuo; Ubukata, A.; Sugaya, Takeyoshi

doi:10.1002/pip.3511

Cited by 4 publications

(20 citation statements)

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“…[22] Based on this breakthrough, the conversion efficiency of InGaP/GaAs tandem cells was successfully improved to 26.9% compared with those reported previously. [14][15][16][17][18][19][20][21][22][23][24][25] To further increase the conversion efficiency, an AlInGaP back-surface field (BSF) layer must be introduced into the cell structure. To introduce both the window and BSF layers, Al-containing materials must be grown multiple times.…”

Section: Introductionmentioning

confidence: 83%

“…The η value of the InGaP single-junction solar cells fabricated using HVPE increased to 17.1%. [22] Moreover, the GaAs single-junction solar cells achieved a J SC of 28.6 mA cm À2 . In the present work, AlInGaP was used as the BSF layer in the GaAs cells; however, almost no performance difference was observed with respect to that associated with the use of InGaP BSF layer.…”

Section: Performance Of Ingap/gaas Tandem Solar Cells With the Alinga...mentioning

confidence: 99%

“…[14] Figure 1 shows the efficiency evolution of HVPE-grown III-V solar cells, summarizing the information obtained from the literature. [14][15][16][17][18][19][20][21][22][23][24][25] In the late 1970s, studies were conducted on III-V solar cells fabricated using HVPE; however, high-performance solar cells could not be achieved owing to issues such as the quality of interfaces and passivation layers, yielding conversion efficiencies of 18-20%. [15][16][17] Recently, the National Renewable Energy Laboratory (NREL) and our group have been developing III-V solar cells using HVPE for reducing epitaxial costs.…”

Section: Introductionmentioning

confidence: 99%

“…However, good-quality Al-containing materials, such as Al(Ga) As and AlIn(Ga)P, have been fabricated using AlCl 3 as the precursor, which exhibits a small equilibrium constant with quartz. [22,[28][29][30][31] We previously reported an n-AlInGaP layer grown via HVPE using AlCl 3 as a window layer in n-on-p-type InGaP solar cells, achieving improved photocurrent production. [22] Based on this breakthrough, the conversion efficiency of InGaP/GaAs tandem cells was successfully improved to 26.9% compared with those reported previously.…”

Section: Introductionmentioning

confidence: 99%

“…[22,[28][29][30][31] We previously reported an n-AlInGaP layer grown via HVPE using AlCl 3 as a window layer in n-on-p-type InGaP solar cells, achieving improved photocurrent production. [22] Based on this breakthrough, the conversion efficiency of InGaP/GaAs tandem cells was successfully improved to 26.9% compared with those reported previously. [14][15][16][17][18][19][20][21][22][23][24][25] To further increase the conversion efficiency, an AlInGaP back-surface field (BSF) layer must be introduced into the cell structure.…”

Section: Introductionmentioning

confidence: 99%

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28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

et al. 2021

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Hydride vapor phase epitaxy (HVPE) is a III–V device fabrication technology that has received attention owing to its low production costs. The properties of passivation layers used to reduce surface and interface recombination losses in III–V materials considerably contribute to the performance of various devices. Herein, solar cells based on AlInGaP back‐surface field (BSF) layers grown via HVPE using aluminum trichloride as the group‐III precursor for Al deposition are presented. Although high‐concentration Si contamination occurs in Al‐containing layers grown using HVPE, AlInGaP with p‐type conductivity can be grown by doping with high‐concentration Zn. For InGaP single‐junction solar cells, the short‐circuit current density and open‐circuit voltage are improved by introducing the AlInGaP BSF layer. Consequently, the InGaP single‐junction solar cells measured under air mass 1.5 global solar spectrum illumination achieve a conversion efficiency of 17.1%. Furthermore, the progress in the development of tandem solar cells grown using HVPE is reported. By improving the performance of the InGaP top cells, InGaP/GaAs tandem cells are fabricated with a new record efficiency of 28.3% using the triple‐chamber HVPE system.

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Section: Introductionmentioning

confidence: 83%

Section: Performance Of Ingap/gaas Tandem Solar Cells With the Alinga...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

et al. 2021

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Ultrathin GaAs Photovoltaic Arrays Integrated on a 1.4 µm Polymer Substrate for High Flexibility, a Lightweight Design, and High Specific Power

Cho

Jung

Kim

et al. 2022

Adv Materials Technologies

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Lightweight ultrathin solar cells with high efficiency and reliability serve as a convenient untethered power source for new types of electronic devices, such as attachable or implantable electronics, small‐scale robots, and many others. However, the extreme mechanical properties of high‐performance solar cells and ultrathin films present challenges when handling and processing them to realize ultrathin solar cell arrays. In this paper, a highly efficient GaAs photovoltaic array integrated on an ultrathin polymer film (1.4 µm thick) is presented. Full processes, including framing, cold‐welding, epitaxial lift‐off (ELO), and microfabrication, are used to realize ultra‐flexible and lightweight GaAs photovoltaic arrays. The mechanical characteristics are analyzed via numerical and experimental methods along with demonstrations with electrically functional devices. The power‐to‐weight ratio (specific power: 5.44 W g−1) is in the highest range, even with single‐junction solar cells.

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1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

Yoshida

Oshima

Makita

et al. 2023

Adv Energy and Sustain Res

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Multijunction solar cells combining III–V and Si materials can provide high photoelectric conversion efficiency. Two‐terminal III–V//Si triple‐junction solar cells with an efficiency of 35.9% have already been developed using metal–organic vapor‐phase epitaxy and the direct wafer bonding technique. This study, however, proposes the low‐cost fabrication of III–V solar cells using hydride vapor‐phase epitaxy (HVPE). GaInAsP solar cells are fabricated using HVPE to apply to middle cells in III–V//Si triple‐junction structures. By controlling the partial pressure of the precursors, the optimal bandgap energy of 1.5 eV is obtained for the HVPE‐grown GaInAsP quaternary alloys. The 1.5 eV GaInAsP single‐junction solar cells show higher open‐circuit voltage than the HVPE‐grown GaAs solar cells. The open‐circuit voltage of the GaInAsP solar cells fabricated with a GaInAsP growth rate of 77.6 μm h−1 reaches 1.1 V upon the formation of the rear‐heterojunction structure. In addition, the external quantum efficiency spectra of the HVPE‐grown GaInP/GaInAsP dual‐junction solar cells show that the 1.5 eV GaInAsP solar cells are superior to the GaAs solar cells in terms of current matching for subcells in the III–V//Si triple‐junction structures.

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Cited by 4 publications

References 0 publications

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System

Ultrathin GaAs Photovoltaic Arrays Integrated on a 1.4 µm Polymer Substrate for High Flexibility, a Lightweight Design, and High Specific Power

1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures

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