Covalent bridges – an induced modification of the conduction band in layered crystals

Abstract

A cross-rearrangement of the conduction band of a layered crystal intercalated with dopant atoms which create covalent bridges is discussed. The dispersion laws (including analytical ones) of splitted subbands of the conduction band and the following rearrangement parameters have been found: characteristic concentration, width of the gap between subbands, and the energy value of the shift of the lower subband with respect to the initial position of the conduction band. The energy position of the resonant level versus parameters of the chosen model has been obtained and the conditions for this level to arise as well as its concentrational broadening were analysed. Changes of the anisotropy of the effective masses in extrema of the created subbands have been revealed. The results of investigations are in a good agreement with experimental data concerning layered In 4 Se 3 crystals doped by copper.