Coupling of electronic transport and defect engineering substantially enhances the thermoelectric performance of p-type TiCoSb HH alloy

Verma, Ajay Kumar; Johari, Kishor Kumar; Dubey, Preeti; Candolfi, Christophe; Lenoir, Bertrand; Walia, Sumeet; Dhakate, Sanjay R.; Gahtori, Bhasker

doi:10.1016/j.jallcom.2023.169416

Cited by 6 publications

(3 citation statements)

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“…36 The possibility to parallel enhance point-defect scattering through atomic substitutions and induce electronic band convergence in p-type TiCoSb alloys have been demonstrated in recent studies, yielding decreased κ L values of 2.5 W m −1 K −1 at 823 K in Ti 0.8 Zr 0.2 Co 0.85 Fe 0.15 Sb 0.96 Sn 0.04 . 37 The resulting improved maximum ZT value of 0.54 at 823 K places this alloy among the best reported p-type TiCoSb-based compositions without phase separation.…”

Section: Introductionmentioning

confidence: 85%

Approaching the minimum lattice thermal conductivity in TiCoSb half-Heusler alloys by intensified point-defect phonon scattering

Verma,

Jain,

Johari

et al. 2023

Mater. Adv.

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Section: Introductionmentioning

confidence: 85%

Approaching the minimum lattice thermal conductivity in TiCoSb half-Heusler alloys by intensified point-defect phonon scattering

Verma,

Jain,

Johari

et al. 2023

Mater. Adv.

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“…P-type half-Heusler alloys. (Ti,Zr)(Co,Fe)Sb [218] (Ti,Zr)(Co,Fe)Sb/Z Sn [218] Ti(Fe,Ni)Sb [200] Ti(Co,Fe)Sb+InSb [94] Table 2. Cont.…”

Section: -Electron Systemunclassified

Development of Thermoelectric Half-Heusler Alloys over the Past 25 Years

Rogl

2023

Crystals

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Half-Heusler alloys are among the most promising thermoelectric materials. In the present review, thermoelectric properties (at 300 K and 800 K) of more than 1100 compositions from more than 220 publications between 1998 and 2023 were collected and evaluated. The dependence of the peak figure of merit, ZTmax, of p- and n-type half-Heusler alloys on the publishing year and the peak temperature is displayed in several figures. Furthermore, plots of ZT vs. the electrical resistivity, the Seebeck coefficient and the thermal conductivity at 300 K and 800 K are shown and discussed. Especially thermal conductivity vs. power factor leads to a good overview of ZT. For both p- and n-type individually separated into systems, ZTs and peak ZTs in dependence on the composition are displayed and discussed. This overview can help to find the ideal half-Heusler alloy for practical use.

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“…Considering the thermal matching in real applications, it is useful to achieve excellent n-type and p-type thermoelectric properties in the same parent materials, which highlights the importance of ZrCoSb and ZrCoBi-based HH compounds. Recent studies indicate that through electron doping, substituting V, Nb, and/or Ta for Zr and substituting Ni for Co could improve the thermoelectric properties of n-type ZrCoSb-based HH alloys. , Among them, n-type Zr 0.86 Ta 0.14 CoSb achieves a zT of 0.8 at 973 K. For p-type ZrCoSb, substituting Fe, Ru for Co , or substituting Sn for Sb could improve their thermoelectric properties. For instance, p-type Zr 0.44 Ti 0.12 CoSb 0.8 Sn 0.2 has the zT value of 0.97 at 973 K, and p-type Zr 0.5 Hf 0.5 CoSb 0.8 Sn 0.2 has the zT value of 0.93 at 1123 K. , For ZrCoBi, zirconium (Zr) atoms have four valence electrons, cobalt (Co) atoms have nine valence electrons, and bismuth (Bi) atoms have five valence electrons.…”

Section: Introductionmentioning

confidence: 99%

Intensified Phonon Scattering in ZrCoBi Half-Heusler by Noble Metals Doping

Bao,

Liu,

et al. 2024

ACS Appl. Mater. Interfaces

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ZrCoBi-based half-Heuslers have great potential in power generation applications because of their high thermoelectric performance in both p-and n-type constituents. In this work, ntype ZrCoBi with improved thermoelectric performance has been realized by intensifying the phonon scattering via noble metal doping, e.g., Pd and Pt doping. The carrier concentration was effectively tuned to the optimal range, and the lattice thermal conductivity was greatly suppressed via the strong strain field and mass fluctuation scattering brought about by the large difference in atomic size and mass between Pd or Pt and Co. Consequently, the state-of-art figure of merit zT ∼1 was achieved in Pd-or Pt-doped ZrCoBi. In addition, the average zT avg values for ZrCo 0.95 Pd 0.05 Bi and ZrCo 0.925 Pt 0.075 Bi have reached 0.58 and 0.51, respectively, which are higher than those of most of the reported n-type ZrCoBi-based and ZrCoSb-based half-Heusler alloys.

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Coupling of electronic transport and defect engineering substantially enhances the thermoelectric performance of p-type TiCoSb HH alloy

Cited by 6 publications

References 84 publications

Approaching the minimum lattice thermal conductivity in TiCoSb half-Heusler alloys by intensified point-defect phonon scattering

Approaching the minimum lattice thermal conductivity in TiCoSb half-Heusler alloys by intensified point-defect phonon scattering

Development of Thermoelectric Half-Heusler Alloys over the Past 25 Years

Intensified Phonon Scattering in ZrCoBi Half-Heusler by Noble Metals Doping

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