Coupling of charge carriers with magnetic entropy for power factor enhancement in Mn doped Sn_1.03Te for thermoelectric applications

Abstract

An approach for utilizing magnetism to try to enhance thermoelectric properties of Mn doped self-compensated Sn1.03Te in context of its dilute magnetic nature.

Rare earth doping and effective band-convergence in SnTe for improved thermoelectric performance

“…18 Recently, we have also demonstrated that the effect of interaction between magnetic dopants and charge carriers to be an unique concept for enhancement of the carrier effective mass (m*) and TE performance of SnTe. 3 These results indicate that TE performance of SnTe can be improved with doping and it can emerge as an alternative to PbTe.…”

“…More details of preparation and characterization details were described in our earlier work. [3][4][5] High temperature S and σ measurements were performed on a bar shape (~ 3 mm x 2 mm x 10 mm) samples in a homemade setup, where S was measured by differential method with ΔT = 10 K and σ in conventional four probe geometry under high vacuum. Quantum design physical property measurements system was used for low temperature transport and Hall Effect measurements.…”

“…Consequently, doping in SnTe has been used as an effective strategy to control charge carriers for TE application. [1][2][3][4][5] Technologically, TE materials can directly and reversibly convert waste heat to electrical energy for power generation and refrigeration with acoustically silent and emission free techniques. 6 The performance of any TE material depends on the dimensionless figure of merit, ZT = (S 2 σ/κ)T, where S is Seebeck coefficient, σ is electrical conductivity, κ is total thermal conductivity which has contributions from both electronic (κe) and lattice (κl) parts, and T is average absolute temperature, respectively.…”

Fabrication and Thermoelectric Properties of Chromium Silicide Thin Films

“…(3,4) We have proposed the use of magnetism to enhance the properties of thermoelectric materials. Magnetic ion doping has been demonstrated for various systems, such as CuGaTe 2 , (5) Bi 2 Te 3 , (6) and SnSe, (7) to be a possible route to increase the power factor. Such an increase is not automatic and occurs in cases where electrical carriers have strong coupling with doped magnetic moments, effectively modifying transport properties.…”

“…This will be detrimental to mobility, but the overall increase in power factor has been realized. (5)(6)(7) Some good-performance thermoelectric compounds have also been recently discovered amongst magnetic semiconductors, where magnetic elements are the main constituents. (8)(9)(10)(11)(12)(13) Carrier-doped CuFeS 2 exhibits a large power factor at room temperature (RT), speculated to originate from strong magnetic interactions.…”