Coupling electron-hole and electron-ion plasmas: Realization of an npn plasma bipolar junction phototransistor

Wagner, C. J.; Tchertchian, P. A.; Eden, J. G.

doi:10.1063/1.3488831

Cited by 30 publications

(24 citation statements)

References 6 publications

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“…This behavior is more easily seen in the hysteresis of a plot of collector current vs. base current, as is shown in Figure 5.2. For increasing supply voltage (+HV, as labeled in Figure 4.1), the amount of base current required to reach saturation decreases, a typical behavior which has previously been attributed to photogenerated current, due to the presence of a light-emitting plasma just above the exposed surface of the base region [6,7,8]. These I-V data will be used later in the calculation of the secondary electron emission coefficient, γ, for the PBJT's exposed silicon surface.…”

Section: Current-voltage Characteristics Of the Pbjtmentioning

confidence: 97%

“…In 2010, Wagner et al demonstrated a new type of optoelectronic device, called the plasma bipolar junction transistor (PBJT), in which the collector of a traditional npn bipolar junction transistor is replaced by a DC discharge [6,7,8]. The PBJT is shown schematically in Figure …”

Section: Historical Backgroundmentioning

confidence: 99%

“…Previously demonstrated PBJTs (those fabricated and tested by Wagner and Tchertchian) were fabricated on silicon-on-insulator (SOI) wafers having an oxide thickness of 2 µm, a device-layer thickness of 15 µm and a handlewafer thickness of 350 µm [6,7]. This design is shown in Figure 3.2.…”

Section: Fabricationmentioning

confidence: 99%

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Observation of plasma sheath modulation in the plasma bipolar junction transistor

Houlahan

Wagner

et al. 2012

2012 Abstracts IEEE International Conference on Plasma Science

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Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains.ii To my family, for their love and support iii ACKNOWLEDGMENTS

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Section: Current-voltage Characteristics Of the Pbjtmentioning

confidence: 97%

Section: Historical Backgroundmentioning

confidence: 99%

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Observation of plasma sheath modulation in the plasma bipolar junction transistor

Houlahan

Wagner

et al. 2012

2012 Abstracts IEEE International Conference on Plasma Science

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“…[9] The latter, designated as the Plasma Bipolar Junction Transistor (PBJT), is a transistor whose radiative output can be modulated and extinguished with an emitter-base reverse bias < 1 V. Controlling the electrical properties of the base, which serves as an electrode for the collector plasma, provides the path to full transistor operation. The physics of interactions between a nonequilibrium plasma and a semiconductor have been investigated previously [10,11], but almost exclusively in the context of plasma etching, in which the semiconductor plays essentially a passive role.…”

Section: The Recent Realization Of Optoelectronic Devices Based On Inmentioning

confidence: 99%

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Tchertchian

Wagner

Houlahan

et al. 2011

Contrib. Plasma Phys.

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Coupling electron-hole (e − -h + ) and electron-ion plasmas across a narrow potential barrier with a strong electric field provides an interface between the two plasma genres and a pathway to electronic and photonic device functionality. The magnitude of the electric field present in the sheath of a low temperature, nonequilibrium microplasma is sufficient to influence the band structure of a semiconductor region in immediate proximity to the solid-gas phase interface. Optoelectronic devices demonstrated by leveraging this interaction are described here. A hybrid microplasma/semiconductor photodetector, having a Si cathode in the form of an inverted square pyramid encompassing a neon microplasma, exhibits a photosensitivity in the ∼ 420 -1100 nm region as high as 3.5 A/W. Direct tunneling of electrons into the collector and the Auger neutralization of ions arriving at the Si surface appear to be facilitated by an n-type inversion layer at the cathode surface resulting from bandbending by the microplasma sheath electric field. Recently, an npn plasma bipolar junction transistor (PBJT), in which a low temperature plasma serves as the collector in an otherwise Si device, has also been demonstrated. Having a measured small signal current gain h fe as large as 10, this phototransistor is capable of modulating and extinguishing the collector plasma with emitter-base bias voltages < 1 V. Electrons injected into the base when the emitter-base junction is forward-biased serve primarily to replace conduction band electrons lost to the collector plasma by secondary emission and ion-enhanced field emission in which ions arriving at the base-collector junction deform the electrostatic potential near the base surface, narrowing the potential barrier and thereby facilitating the tunneling of electrons into the collector. Of greatest significance, therefore, are the implications of active, plasma/solid state interfaces as a new frontier for plasma science. Specifically, the PBJT provides the first opportunity to control the electronic properties of a material at the boundary of, and interacting with, a plasma. By specifying the relative number densities of free (conduction band) and bound (valence band) electrons at the base-collector interface, the PBJT's emitter-base junction is able to dictate the rates of secondary electron emission (including Auger neutralization) at the semiconductor-plasma interface, thereby offering the ability to vary at will the effective secondary electron emission coefficient for the base surface.

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“…They were able to increase the conduction current by 4X by biasing the electron emitter by -20V. Wagner et al, from the same group, developed a plasma BJT that consisted of a hybrid plasma-semiconductor interacting device [16]. The plasma BJT exhibited a voltage gain of 27 and was able to turn off the device (plasma) with a mere 1V of emitter-base voltage.…”

Section: Introductionmentioning

confidence: 99%

Microplasma Field Effect Transistors

Tabib-Azar¹,

Pai²

2017

Preprint

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Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here we review and discuss MPDs with an emphasis on new architectures that have evolved during the past 7 years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1-10 μm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed.Index Terms-Plasma devices; atmospheric-pressure plasmas; glow discharge devices; power amplifiers; terahertz switches I. INTRODUCTIONPlasmas are extensively studied during the past century [1]. Their applications in large-scale devices for fusion, and small-scale devices in switches are well accomplished and developed. Here, we concentrate on cold plasmas that can be easily generated in a small (< 1 mm 3 ) volume with moderate electrical powers of less than 5 Watts and discuss their applications in devices similar to diodes, MOSFETs and digital and analog three-terminal devices with power gains for amplification of signals. Except in distributed plasma devices and in magnetic field sensors, we only consider non-magnetized plasmas. For the most part, we assume that the plasma is quasi-neutral and it is generated at atmospheric pressures that range from 0.6 to 1.1 atmosphere.Microplasma devices have received a renewed attention in the past 5-7 years owing to their potential applications in harsh environment. Important features that make plasma devices attractive are: a) their very large off-to-on resistance ratios (10 10 Ω/0.1 Ω), b) the ability to conduct very large currents, c) the ability to operate at very high temperatures (can be as high as 1000 o C), d) improved operation in the presence of ionizing radiation, e) the ability to traverse shortest "electrical" distance between their anode and cathode (this property can be used to solve "shortest" path problems) [2], and f) the ability to form programmable electrically conducting paths making them suitable for reconfigurable antennas and circuits [3]. MPDs are also being explored in developing chip-scale electron beam accelerators and a 100 GeV electron accelerators has already been demonstrated [4].Microplasma devices are currently used in displays [5], light sources [6], ionization devices for chemical analysis [7], material processing [...

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Coupling electron-hole and electron-ion plasmas: Realization of an npn plasma bipolar junction phototransistor

Cited by 30 publications

References 6 publications

Observation of plasma sheath modulation in the plasma bipolar junction transistor

Observation of plasma sheath modulation in the plasma bipolar junction transistor

Control of the Interface Between Electron‐Hole and Electron‐Ion Plasmas: Hybrid Semiconductor‐Gas Phase Devices as a Gateway for Plasma Science

Microplasma Field Effect Transistors

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