Coupling effect between hole storage and interfacial charge transfer over ultrathin CoPi-modified hematite photoanodes

Abstract

Understanding the functionality of modification layer in regulating charge transfer process at the semiconductor/electrolyte interface is of great significance towards rational design of photoelectrocatalytic water oxidation system. Herein, by systematically...

Simultaneous Improvement in Hole Storage and Interfacial Catalysis over Ni–Fe Oxyhydroxide-Modified Tantalum Nitride Photoanodes

“…For practical reason, it is desirable to explore facile modification with a multi-functional material, but it remains a great challenge so far. Our recent work indicated a coupling effect between interfacial charge transfer and hole-storage processes over a well-known OER catalyst of CoPi . As we know, surface modification materials with enhanced hole-storage property and preferable OER catalytic activity would be beneficial for boosting the PEC performances of photoelectrodes.…”

“…Our recent work indicated a coupling effect between interfacial charge transfer and hole-storage processes over a well-known OER catalyst of CoPi. 34 As we know, surface modification materials with enhanced hole-storage property and preferable OER catalytic activity would be beneficial for boosting the PEC performances of photoelectrodes. However, to the best of our knowledge, simultaneous improvement in both hole storage and interfacial catalysis processes over a single material-modified photoelectrode for enhanced performance has not been reported so far.…”

Effect of acid treatment on boosting the photoelectrochemical performance of doped and codoped α-Fe2O3 photoanodes

“…3 In the choice of photoanode material for water oxidation, hematite (a-Fe 2 O 3 ) is regarded as one of the most promising candidates, motivated by its broad photoabsorption scope up to 600 nm, superior stability, nontoxicity, and relatively high photon-transfer efficiency. 6,7 Unfortunately, besides its conduction band being lower than the water reduction potential, there are some urgent issues on the a-Fe 2 O 3 photoanode that remain to be addressed, including the deactivation of photogenerated carriers by bulk recombination due to the low electron mobility and the loss of voltage input due to its sluggish water oxidation kinetics induced by severe surface states acting as surface chargerecombination centers. [8][9][10] Doping with high-valence ions, such as Ti 4+ , 11 Sn 4+ , 12 Pt 4+ , 13 or Ge 4+ , 14 is one of the most powerful approaches for a-Fe 2 O 3 modication, and has been adopted to considerably improve the electron conductivity and promote the photocurrent density of the a-Fe 2 O 3 photoanode.…”