Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Kamakura, Yoshinari; Mori, N.; Taniguchi, Kenji; Zushi, Tomofumi; Watanabe, Takanobu

doi:10.1109/sispad.2010.5604561

Cited by 5 publications

(4 citation statements)

References 17 publications

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“…From 150 to 600 K, the evolution of the experimental conductivities is proportional to T α and is well fitted by 5 1. 34 3.09 10…”

Section: Phonon-phonon Relaxation Timementioning

confidence: 99%

“…By coupling this approach with eMC simulation, it has been possible to describe the optical phonon bottleneck in ultra-short transistors and the resulting current degradation through an analytic formulation of thermal conductivity in thin Si films [32] [33]. Kamakura et al have implemented a MC method to solve the BTE for both electrons and phonons for 1D Si diodes with simplified phonon scattering rates but this approach has not been extended to transistors yet [34]. Recently, Ni et al…”

Section: Introductionmentioning

confidence: 99%

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Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

2015

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To study the thermal effect in nano-transistors, a simulator based on the self-consistent solution of the Boltzmann transport equations (BTEs) for both electrons and phonons has been developed. It has been used here to investigate the self-heating effect in a 20-nm long double gate MOSFET. In this model, a Monte Carlo (MC) solver for electrons has been coupled with a direct solver for the phonon transport. This method is particularly efficient to provide a deep insight on the out-of-equilibrium thermal dissipation occurring at the manometer scale when the length of the devices is smaller than the mean free path of both charge and thermal carriers. This approach allows us to evaluate accurately the phonon emission and absorption spectra in both real and energy spaces.

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“…From 150 to 600 K, the evolution of the experimental conductivities is proportional to T α and is well fitted by 5 1. 34 3.09 10…”

Section: Phonon-phonon Relaxation Timementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

2015

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“…Previous coupled EMC approaches treated electrothermal interactions by employing the net energy lost via electron scattering to calculate a heat generation rate [24]. This rate was then used to obtain a temperature map by solving the heat transport equation either analytically [24,25] or stochastically [26,27]. This work expands on the particle-based EMC approach for phonon transport presented in Ref.…”

Section: Introductionmentioning

confidence: 99%

Particle-Based Modeling of Electron–Phonon Interactions

Sabatti

Goodnick

Saraniti

2019

Journal of Heat Transfer

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An important challenge in particle-based modeling of electron–phonon interactions is the large difference in the statistical weight of the particles in the two simulated populations. Each change in the state of a simulated phonon during scattering is statistically representative of an interaction with multiple simulated electrons, which results in a large numerical burden accurately represent both populations. We developed two stochastic approaches to mitigate this numerical problem. The first approach is based on Poisson modeling of the scattering processes coupled with a thinning algorithm, which works effectively at steady-state, but it is prone to statistical errors in the energy during the transient regime. The second approach is based on point process (PP) modeling of the scattering, allowing stochastical book-keeping, which corrects the energy error. Here, we present a mathematical description of the problem and the two stochastic approaches along with the numerical results we obtained for the synchronous transient simulation of the electron and phonon populations.

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“…Kamakura et al have implemented a MC method to solve the BTE for both electrons and phonons for 1D Si diodes with simplified phonon scattering rates but this approach has not been extended to transistors yet [3]. Ni et al have used the phonon generation spectrum extracted from eMC simulation as input for a pBTE solver with anisotropic relaxation times and Brillouin zone to evaluate the hotspot temperature in a MOSFET [4].…”

Section: Introductionmentioning

confidence: 99%

Electrothermal simulation of ultra-scale MOSEFT

Nghiem

Saint-Martin

Dollfus

2015

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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To investigate self-heating effects in double gate MOSFETs, a simulator solving self-consistently the Boltzmann transport equations (BTE) for both electrons and phonons has been developed. A Monte Carlo (MC) solver for electrons is coupled with a direct solver for the phonon transport. This method is particularly efficient to evaluate accurately the phonon emission and absorption spectra in both real and energy spaces. The resulting degradation of the I-V characteristics is estimated for a 20 nm-long Double-Gate MOSFET.

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Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices

Cited by 5 publications

References 17 publications

Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons

Particle-Based Modeling of Electron–Phonon Interactions

Electrothermal simulation of ultra-scale MOSEFT

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