Coupled influence of damped propagation of dopant and external oscillatory field on excitation kinetics of doped quantum dot

Abstract

We investigate the excitation kinetics of a repulsive impurity doped quantum dot exposed to external oscillatory field. The dopant is considered to be propagating under damped condition. Such a propagation bears importance because of its intimate connection with impurity drift in nanodevices. For simplicity, we have considered an inherently linear motion of the dopant and impurity potential has been assumed to have a Gaussian nature. The interplay between the damping strength and the characteristic parameters of external field has been found to fabricate the kinetics in a delicate way. The present investigation could provide some useful perceptions in nanoelectronic applications.