Counter-oxidation of superficial Si in single-crystalline Si on SiO2 structure

Takahashi, Yasuo; Ishiyama, Toshihiko; Tabe, Michiharu

doi:10.1063/1.112485

Cited by 48 publications

(31 citation statements)

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“…Furthermore, recent work has shown that some oxygen diffuses through the silicon layer to the interface with the buried oxide, enough to grow a few nanometers of SiO 2 at this interface. 31 This ensures that both the upper and lower interfaces of the silicon layer have equivalent passivation. Typical Si layers were tapered 10 nm over 50 mm.…”

Section: Sample Preparationmentioning

confidence: 99%

Photoluminescence properties of silicon quantum-well layers

Saeta

Gallagher

1997

Phys. Rev. B

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Nanometer-scale crystal silicon films surrounded by SiO 2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX ͑separation by implantation of oxygen͒ and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (Ͻ2 nm͒, all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ϳ35 s at room temperature and ϳ54 s at 88 K; the decay was nonexponential and did not exhibit spectral diffusion. Atomic force microscope images of the silicon layers showed that luminescing layers were broken apart into regions ϳ50-100 m in diameter, suggesting that luminescence comes only from regions small enough to have no nonradiative recombination centers in the band gap. These results are inconsistent with a simple quantum-confinement model for luminescence in two-dimensional silicon and suggest the importance of radiation from surface states. ͓S0163-1829͑97͒02704-5͔

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Section: Sample Preparationmentioning

confidence: 99%

Photoluminescence properties of silicon quantum-well layers

Saeta

Gallagher

1997

Phys. Rev. B

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“…22,23 However, the thickness increase of buried dielectrics in INTS is not more than 1 nm under the typical condition, because nitrided layers ͑at both surface and interface͒ act as a diffusion barrier against reactants. This is, of course, preferable for the formation of thin gate oxynitrides in the MOS ultralarge scale integrated ͑ULSI͒ technology.…”

Section: Resultsmentioning

confidence: 98%

“…ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 157.182.150 22. Downloaded on 2015-06-29 to IP…”

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confidence: 98%

A Method of Making Oxynitrides by Interface Nitridation Through Silicon

Suizu

Fukumoto

Ozawa

2001

J. Electrochem. Soc.

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A method of forming oxynitrides is described. This method is based on a newly discovered phenomenon, namely, the incorporation of nitrogen into the silicon/SiO 2 interface when the SiO 2 film with silicon layer on top of it is annealed in a nitriding ambient such as NH 3 or NO. The nitrogen concentration at the silicon/SiO 2 interface can be increased to 5-6 ϫ 10 14 atoms/cm 2 , which is considered to be sufficient for the suppression of the boron penetration in the p ϩ -polysilicon gate metal oxide semiconductor ͑MOS͒ field effect transistor. The MOS structure with the oxynitride having the nitrogen distributed at the topmost surface can be fabricated by taking advantage of the phenomenon. It should be noted that the amount of nitrogen incorporated into the SiO 2 /substrate interface is negligible in the case of this interface nitridation through silicon ͑INTS͒ phenomenon. This term is also used to refer to the method utilizing the phenomenon. We have applied INTS to the fabrication of the MOS structure, and have investigated the interface properties. As expected from the distribution of nitrogen, the interfaces of those MOS structures have been proved to exhibit properties as good as those of interfaces of MOS structures with pure SiO 2 ; i.e., the fixed charge density (Q f ) of less than 1 ϫ 10 9 cm Ϫ2 in the number density, and lower interface trap density (D it ) than in the MOS structures with the usual NO oxynitrides.Prevention of the boron penetration in the p ϩ -polysilicon gate metal oxide semiconductor field effect transistor ͑MOSFET͒ is one of the most important applications of oxynitrides as gate dielectrics. 1-4 Typical methods of forming oxynitrides for the purpose are as follows: ͑i͒ ammonium (NH 3 ) nitridation ϩ reoxidation, 5,6 ͑ii͒ nitrous oxide (N 2 O) nitridation, 7-9 and ͑iii͒ nitric oxide ͑NO͒ nitridation. 10,11 In all these methods, however, nitrogen is incorporated into the SiO 2 /silicon interface ͑i.e., MOS interface͒. Those kinds of nitrogen distribution are known to bring about the deterioration of the properties of MOS interface, such as the increase of the positive fixed charge density (Q f ), 12-15 and, in particular cases, also the increase of the interface trap density (D it ). 15 This deterioration of the interface properties is considered to result in the degradation of the performances of MOSFETs. On the other hand, it is supposed that any SiN-like layers ͑nitrogen-rich layer in oxynitride is one of them͒ suppress boron penetration wherever they may be; bottom ͑i.e., MOS interface͒, middle, or top of the dielectric film. In this context, the demand for the development of oxynitrides without nitrogen at or near the MOS interface arises in order to obtain an effective boron diffusion barrier without deterioration of the properties of the MOS interface.Several methods of making such oxynitrides have been proposed. The major methods are 1. N 2 O or NO nitridation ϩ reoxidation, 16 2. nitrogen implantation into polysilicon ϩ drive-in annealing, 17,18 and 3. nitridation of SiO 2 su...

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“…The PIA was carried out at 1325-1350°C in Arϩ0.5% O 2 for 5 or 6 h. Following the PIA, oxygen was introduced into the BOX of some structures by a supplemental ion implantation ͑doses 1ϫ10 17 and 5ϫ10 17 cm Ϫ2 ͒ and followed by a PIA in Ar at 1000°C for 1 h. Some of the low-dose structures were subjected to an internal thermal oxidation ͑ITOX͒ at 1250-1350°C in Ar with 10% or 30 % of O 2 for 4 or 6 h. During this process, the BOX grows as a result of oxygen transport through the top silicon layer. 68 For the sake of comparison, also studied were oxide layers produced by implanting Si with such high oxygen dose (Ͼ10 19 cm Ϫ2 ) that the entire top Si layer is consumed ͑equilibrium oxide͒. 69 The equilibrium oxides received the same PIA as the conventional SI-MOX structures, however, without the top Si layer, i.e., in an unconfined configuration.…”

Section: Methodsmentioning

confidence: 99%

Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon

Afanasʼev

Stesmans

Revesz³

et al. 1997

Journal of Applied Physics

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The microstructure and electrical properties of buried SiO2 layers produced in silicon by the implantation of oxygen ions are analyzed in terms of implantation parameters and supplemental incorporation of oxygen. The buried oxides show inhomogeneous etching in aqueous HF, revealing the presence of a crystalline oxide phase and Si-enriched regions. Silicon enrichment in SiO2 is found in the form of Si inclusions and oxygen deficient network defects. The former are found to be sensitive to the oxygen implantation profile, and may arise as a result of a blockage of Si outdiffusion by crystalline oxide inclusions. The network defects, in turn, are predominantly generated during high temperature postimplantation annealing, caused possibly by some mechanism of silicon transport from the interfaces into the bulk of oxide. The electron trapping and electrical conduction characteristics of buried oxides are found to correlate with the density and size of the inhomogeneities. By contrast, hole trapping and the generation of positive charge at the Si/oxide interfaces by exposure to hydrogen at elevated temperature are controlled by the network defects in the bulk of the oxide and in the near interfacial layers, respectively.

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Counter-oxidation of superficial Si in single-crystalline Si on SiO2 structure

Abstract: Articles you may be interested inLuminescence of phosphorus containing oxide materials: Crystalline SiO 2 P and 3 P 2 O 5 7 SiO 2 ; CaO P 2 O 5 ; SrO P 2 O 5 glasses AIP Conf.

Cited by 48 publications

References 9 publications

Photoluminescence properties of silicon quantum-well layers

Photoluminescence properties of silicon quantum-well layers

A Method of Making Oxynitrides by Interface Nitridation Through Silicon

Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon

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